Lithium-Doped Gallium Arsenide Tunnel Diodes

Epstein, A. S.; Caldwell, J. F.

doi:10.1063/1.1713161

Cited by 5 publications

(2 citation statements)

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“…5c. This behavior is characteristic of a tunnel diode [33][34][35][36][37][38][39][40][41] and is consistent with degenerative doping and the introduction of donor states below the conduction band minimum.…”

Section: Phosphorus-doped B 5 C Inmentioning

confidence: 49%

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

McIlroy

Hwang

Yang

et al. 1998

Applied Physics A: Materials Science & Processing

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Section: Phosphorus-doped B 5 C Inmentioning

confidence: 49%

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

McIlroy

Hwang

Yang

et al. 1998

Applied Physics A: Materials Science & Processing

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“…Not all types of dopants lead to this shift from p-type to n-type. This behavior is characteristic of a tunnel diode [31][32][33][34][35][36][37][38][39] and is consistent with degenerative doping and the introduction of donor states below the conduction band minimum. 28 With the higher nickel doping, a negative differential resistance, or a valley in the current, occurs in the effective forward bias direction for diodes formed on n-type silicon and p-type Si, as seen in Fig.…”

Section: A Ni-doped Boron-carbon Alloysmentioning

confidence: 57%

Nickel doping of boron–carbon alloy films and corresponding Fermi level shifts

Hwang

Remmes

Dowben

et al. 1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inResidual compressive stress induced infrared-absorption frequency shift of hexagonal boron nitride in cubic boron nitride films prepared by plasma-enhanced chemical vapor deposition J. Appl. Phys. 112, 053502 (2012); 10.1063/1.4749805 XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO 2 (101) thin films Appl. Phys. Lett. 98, 232107 (2011); 10.1063/1.3596449 Ni doping of semiconducting boron carbideWe have grown nickel doped boron-carbon alloy films by the technique of plasma enhanced chemical vapor deposition. The source gas closo-1,2-dicarbadodecaborane ͑orthocarborane͒ was used to grow the boron-carbon alloy, while nickelocene ͓Ni͑C 5 H 5 ͒ 2 ͔ was used as the dopant source for nickel. With sufficient levels of Ni doping, diodes with characteristic tunnel diode behavior can be fabricated. The doping of nickel transformed a B 5 C p-type material, relative to lightly doped n-type silicon, to a strongly n-type material. In order to gain insight into the shift of the Fermi level of the Ni-doped material, we have examined the changes in the electronic structure of sodium doped films of the precursor molecule orthocarborane which has an icosahedral structure similar to that of boron-carbon materials. The establishment of unoccupied states at the Fermi level with Na doping of the orthocarborane films is consistent with the transformation of the p-type B 5 C to an n-type material with Ni doping.

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1977

Tunnelling and Negative Resistance Phenomena in Semiconductors

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Lithium-Doped Gallium Arsenide Tunnel Diodes

Abstract: Articles you may be interested inFabrication of a gated gallium arsenide heterostructure resonant tunneling diode

Cited by 5 publications

References 7 publications

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

Nickel doping of boron–carbon alloy films and corresponding Fermi level shifts

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