Vapor phase deposition of gallium nitride from organometallic compounds and NH3 offers the possibility of lower growth temperatures compared to Ga-halide compounds due to the weaker Ga-organic radical bonds compared to the Ga-halide bonds (1). Lower
situation arising during calibration with a standard will cause subsequent analysis of unknowns to yield erroneously high results. Use of a sampling constant here would define how many replicates will be required for each constituent to obtain results within a certain confidence limit of the true concentration, and also eliminate the rejection of valid data.LITERATURE CITED(1) E.
The growth conditions required to epitaxially synthesize the tetragonal chalcopyrite semiconductor
ZnSiAs2
on cubic Ge and
normalGaAs
substrates are described. Some structural and electrical properties of the resulting epitaxial layers are reported. The routine unique epitaxial growth of (001)
ZnSiAs2
on (100) substrates of Ge and
normalGaAs
, in preference to the (100) or (010)
ZnSiAs2
orientations, has been demonstrated. Growth conditions have also been identified that have led to mixtures of the (010) and (001) orientations of
ZnSiAs2
on these (100) cubic substrates. The use of
normalGaAs
substrates has led to an autodoping problem similar to that observed for
normalGaAs
grown on Ge.
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