Vapor Phase Epitaxial Growth of ZnSiAs2 on Ge and GaAs Substrates

Abstract

The growth conditions required to epitaxially synthesize the tetragonal chalcopyrite semiconductor ZnSiAs2 on cubic Ge and normalGaAs substrates are described. Some structural and electrical properties of the resulting epitaxial layers are reported. The routine unique epitaxial growth of (001) ZnSiAs2 on (100) substrates of Ge and normalGaAs , in preference to the (100) or (010) ZnSiAs2 orientations, has been demonstrated. Growth conditions have also been identified that have led to mixtures of the (010) and (001) orientations of ZnSiAs2 on these (100) cubic substrates. The use of normalGaAs substrates has led to an autodoping problem similar to that observed for normalGaAs grown on Ge.