Qualitative analysis of thin gallium nitride films with secondary ion mass spectrometry

Andrews, J. E.; Duhamel, A. P.; Littlejohn, M. A.

doi:10.1021/ac50019a018

Anal. Chem.

1977

DOI: 10.1021/ac50019a018

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Qualitative analysis of thin gallium nitride films with secondary ion mass spectrometry

J. E. Andrews¹,

A. P. Duhamel²,

M. A. Littlejohn³

Abstract: situation arising during calibration with a standard will cause subsequent analysis of unknowns to yield erroneously high results. Use of a sampling constant here would define how many replicates will be required for each constituent to obtain results within a certain confidence limit of the true concentration, and also eliminate the rejection of valid data.LITERATURE CITED(1) E.

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1997

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“…Because of the very similar behavior of the HVPE samples ͑O1, O2͒ and the bulk crystal, we also conclude that the high carrier concentration in the bulk crystal is caused by O donors (see also Refs. [8,22,23]). The different slopes of the A 1 ͑LO͒ mode intensity versus p beyond the onset at 20 GPa are attributed to the sample specific mobility and/or impurity concentration.…”

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confidence: 99%

Pressure Induced Deep Gap State of Oxygen in GaN

Wetzel¹,

Suski²,

Ager³

et al. 1997

Phys. Rev. Lett.

235

130

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O and Si donors in GaN are studied by Raman spectroscopy under hydrostatic pressure p. The ground state of O is found to transfer from a shallow level to a deep gap state at p . 20 GPa reminiscent of DX centers in GaAs. Transferred to Al x Ga 12x N we predict that O induces a deep gap state for x . 0.40. In GaN:Si no such state is induced up to the highest pressure obtained ͑p 25 GPa͒ equivalent to x 0.56 in Al x Ga 12x N and possibly higher. We attribute this distinction to the lattice sites of the dopants. O substituting for N is found to be the origin of high free electron concentration in bulk GaN crystals. [S0031-9007(97)03179-7] PACS numbers: 71.55. Eq, 62.50.+ p, 72.20.Jv, 78.30.Fs Donors in III-V compound semiconductors are of special interest because they can assume both extended or localized states, i.e., they can be metastable [1][2][3][4]. In the most thoroughly studied system, GaAs, either a high free carrier concentration n, alloying with AlAs, or application of hydrostatic pressure p can induce a transition from a shallow hydrogenic state of the dopant to a strongly localized one of the same impurity. Many different donor species, e.g., Si Ga (group-IV element on group-III site) and S As (group-VI on group-V site), transform into the nonhydrogenic configuration at very similar characteristic transition pressures [3,4]. In addition, metastability effects, such as a limited free electron concentration and persistent photoconductivity, have been found and interpreted with activation barriers between the different configurations of the donor. All of these effects have been associated with a so-called DX center [2].In GaN we find that the O donor dopant shows characteristic features of a DX defect when hydrostatic pressure is applied. Si, in contrast, behaves like a hydrogenic donor. This distinction is attributed to the actual lattice site of the impurity, and this effect is extremely pronounced in this compound semiconductor system. The pressure experiments can directly be transferred from GaN to the Al x Ga 12x N system predicting a strongly localized gap state of O for higher Al concentrations.Dopant impurities typically can induce both resonant and hydrogenic defect levels in the electronic band structure. In many cases only the hydrogenic level is relevant. Under certain conditions, however, a charge transfer from a quasihydrogenic state to a strongly localized neutral charge state ͑D 0 ͒ can occur [5]. In addition, as proposed by Chadi and Chang [1], a structural relaxation of the donor impurity in the vicinity of the transition conditions can lead to an activation barrier between the two states. This widely accepted model of a structural relaxation explains the metastability and the activation barrier between the different states of DX centers. Promoted by the transfer of electrons, this new strongly localized state (DX) can be the ground state [6]. Ab initio calculations reproduce the experimental observations in GaAs, including the very similar transition conditions found for all substituti...

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mentioning

confidence: 99%

Pressure Induced Deep Gap State of Oxygen in GaN

Wetzel¹,

Suski²,

Ager³

et al. 1997

Phys. Rev. Lett.

235

130

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Qualitative analysis of thin gallium nitride films with secondary ion mass spectrometry

Cited by 1 publication

References 21 publications

Pressure Induced Deep Gap State of Oxygen in GaN

Pressure Induced Deep Gap State of Oxygen in GaN

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