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Copper cadmium sulphide thin film was deposited onto glass (soda-lime) substrates using chemical bath deposition (CBD) technique at room temperature. Chemical, optical, structural, and microstructural features were examined via the Fourier Transform Infrared Spectroscopy (FTIR), X-ray Diffraction (XRD), UV-Vis Spectroscopy, and High-resolution Transmission Electron Microscopy (HRTEM). FTIR revealed that the associated chemical bond was below the 900 cm-1 marks. The optical band-gap of 2.36 eV was estimated from the absorption analysis. X-ray diffraction measurements reveal that the deposited material is polycrystalline with hexagonal and cubic structures typical of the binary constituents of and thin films. The grain sizes were randomly distributed and ranged between 35 and 60 nm as indicated by the HRTEM.

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.

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The effects of deposition cycles on the structural and optical properties of lead tin sulphide (PbSnS) thin films have been described. Successive ionic layer adsorption and reaction (SILAR) method was used to deposit the ternary material on soda-lime substrates. In the present work, the PbSnS films were grown using lead nitrate, tin chloride dehydrate and thioacetamide solutions as sources of Pb, Sn and S, respectively. XRD measurements revealed that the deposited films were polycrystalline in nature with strong adherent to the substrates. The transmittance was found to be high in the near infrared regions of the electromagnetic radiation and, also increased with deposition cycles. The band gap energy was found to vary from 1.70 to 1.75 eV for 10 and 35 deposition cycles. The study indicates that SILAR is an excellent method in depositing good quality films for device applications. HIGHLIGHTS SILAR is an excellent technique for depositing thin films of lead tin sulphide (PbSnS) Deposition cycles influences the XRD and optical properties of PbSnS thin films PbSnS thin films are useful for solar cell fabrications The band gaps of the PbSnS varies from 1.70 to 1.75 eV with deposition cycles

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Copper dithiocarbamate and aluminium dithiocarbamate were prepared and then characterized by infrared spectroscopy. The combination of the prepared precursors in different ratios was deposited on glass substrates using metalorganic chemical vapour deposition (MOCVD) technique at 450 o C through the pyrolysis of the precursors to yield Cu-Al-S thin films. Compositional, morphological, structural and optical characterizations were then carried out. The compositional analysis revealed that the ratio of Cu to Al in the precursor is not preserved in the films. Morphological study showed that the films are polycrystalline in nature whose homogeneity and grain size distribution decrease with a decrease in Al content of the films. The crystallinity of the films was further revealed from the PXRD results with the formation of the Cu-Al-S crystal structure as the Al content increases in the precursor. The energy gap obtained falls between 2.63 and 2.75 eV which decreases as the Al content in the films decreases. Optical constants such as refractive index and extinction coefficient exhibit a decreasing trend as the Al content in the film decreases.