Synthesis and characterization of copper zinc iron sulphide (CZFS) thin films

In this work, copper zinc sulfide (CZS) ternary thin films were prepared from the pyrolysis of a Bis-(morpholinodithiato-s,s’)-Cu-Zn precursor using metal-organic chemical vapor deposition technique maintained at 450 ℃ in ambient nitrogen as the carrier gas. The deposition flow rate was varied to study its effect on the optoelectronic properties of CZS films. The particle-induced X-ray emission technique (PIXE) of the prepared single solid source precursor shows the presence of copper, zinc, and sulfur. The Fourier transform infrared spectrophotometer of the precursor reveals the metal-metal bond attachment to the ligand at a very low wavenumber. The XRD spectra reveal the formation of the hexagonal closed-packed structure of CZS films with a preferred orientation along the [111] direction. The film crystallite size is found to increase from 10.4 to 12.2 nm as the flow rate increases, while the dislocation density and stress decrease as the deposition flow rate increases. The SEM analysis revealed an improvement in the growth rate of the grains as the flow rate increased. The transmittance of the deposited CZS films was found to increase from 58% to 84.2% in the infrared region with an increase in band gap from 3.08 – 3.64 eV as the flow rate increased. The deposited film shows ohmic properties and an increase in conductivity from 0.243 to 0.847 (Ω cm)-1, while the resistivity decreases as the flow rate increases. These observations provide room for the deposited CZS film to serve as a potential material for optoelectronics and window layer solar cell devices.

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“…The resistivity and sheet resistance of the deposited CZS films were obtained from the following relation [18,47]:…”

Section: Electrical Transport Propertiesmentioning

confidence: 99%

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

et al. 2023

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“…where t is the thickness and T is the transmittance of the films. On the other hand, the transition nature of semiconductor (direct or indirect) depends on the band structure of the material and relates the absorption coefficient and optical band gap (Eg) using the Eqn 2 (Emegha et al, 2022a):…”

Section: Optical Characterizationmentioning

confidence: 99%

“…Many deposition methods of physical and chemical nature have been employed to deposit cadmium sulphide thin films for various applications such as SILAR, metal organic chemical vapour deposition technique, chemical spray pyrolysis, vacuum thermal evaporation, electro-deposition and chemical bath deposition (CBD) or solution growth technique (Abbas & Ahmad, 2013;Abulmackarim et al, 2014;Rao, & Asthith, 2015;Salim et al, 2016;Toma et al, 2021). The chemical bath deposition and solution growth technique has been widely used to synthesis high quality binary and ternary thin films due to its numerous advantages over other methods which include; simplicity, low cost of deposition, excellent film to substrates adhesion as well as low growth temperature and uniformity of films (Emegha et al, 2022a). Due to its high deposition rate, the properties of CBD deposited cadmium sulphide could be engineered by varying the growth process such as deposition time, concentrations, heat treatment and doping with an appropriate element (Emegha et al, 2021a).…”

Section: Introductionmentioning

confidence: 99%

Influence of Molar Concentrations on Chemical Bath Deposited Cadmium Sulphide Thin Films

Emegha¹

2022

SLUJST

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Thin films (TFs) of cadmium sulphide (CdS) have been deposited at 300K on soda-lime substrates. The effect of the molar concentrations was investigated using the X-ray diffraction (XRD) and UV-Vis Spectrophotometer. The XRD measurements show that the TFs were crystalline and increases with increasing molarities. The optical characteristics of the films were studied at spectra range of 300 – 950 nm. It indicated that the band gap energy ranged between 1.80 to 1.83 eV. The films exhibited a high transmittance in the visible and near infrared regions with a low reflectance values within same regions. Other optical constants like extinction coefficient (K), refractive index (n), real (Ɛᵣ) and imaginary (Ɛᵢ) dielectric constants and optical conductivity (σ) were determined with respect to photon energy (eV). These properties of CdS TFs confirm that the material could be beneficial in various optoelectronics applications.

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“…When Ni or Zn are mentioned as dopants, they usually exist in systems with a deficiency in the Cu sublattice, as seen in Ni-doped Cu 1.9 S [36]. Conversely, numerous instances showcase systems where Ni or Zn coexist with Cu in ternary and quaternary chalcogenides, which aligns with the inclination to form relatively stable multi-cationic phases with distinct structures rather than doped Cu 2−x Ch [41,42]. Selenides appear to be much more susceptible to doping with these elements, especially in the case of Ag-doped systems.…”

Section: Introductionmentioning

confidence: 99%

Cu2−xS and Cu2−xSe Alloys: Investigating the Influence of Ag, Zn, and Ni Doping on Structure and Transport Behavior

Mikuła,

Kurek,

Kożusznik

et al. 2024

Metals

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Cu2−xS and Cu2−xSe (0 ≤ x ≤ 0.2) alloys stand out as highly promising materials for thermoelectric applications, owing to the phonon–liquid electron–crystal (PLEC) convention. In this study, we undertake a comprehensive investigation to reassess the synthesis conditions, with a focus on achieving pure-phased systems through a direct reaction between elements at elevated temperatures. Simultaneously, we present experimental evidence showcasing the feasibility of doping these systems with Ag, Ni, and Zn. The study demonstrates that obtaining single-phased systems requires multi-step processes, and the dissolution of chosen impurities appears doubtful, as evidenced by numerous foreign phase segregations. Additionally, it is revealed that the partial dissolution of individual impurities deteriorates the operational parameters of these chalcogenides. For the optimal Cu1.97S composition, it reduces the thermoelectric figure-of-merit ZT from 1.5 to approximately 1.0, 0.65, and 0.85 for Ag-, Ni-, and Zn-doped systems, respectively, while marginally improving their stability. For metal-like Cu1.8Se, the ZT parameter remains at a low level, ranging between 0.09 and 0.15, showing slight destabilization during subsequent operating cycles. The article concludes with an in-depth analysis of the basic thermoelectric performance exhibited by these doped systems, contributing valuable insights into the potential enhancements and applications of Cu2−xS and Cu2−xSe alloys in the field of thermoelectric materials.

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Synthesis and characterization of copper zinc iron sulphide (CZFS) thin films

Cited by 7 publications

References 24 publications

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

Influence of Molar Concentrations on Chemical Bath Deposited Cadmium Sulphide Thin Films

Cu2−xS and Cu2−xSe Alloys: Investigating the Influence of Ag, Zn, and Ni Doping on Structure and Transport Behavior

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