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Thin layers of the ternary chalcopyrite semiconductor CuInS2 grown epitaxially on Si(001) substrates were investigated with respect to the existing phases and their lattice parameters by means of x-ray diffraction at the European Synchrotron Radiation Facility in Grenoble (France). The predominant parts of the samples exhibit the metastable CuAu-type ordering. The smaller volume fractions of the samples showing the ground-state chalcopyrite ordering are distorted in order to accommodate themselves to the tetragonal CuAu-type structure. It is suggested that this finding is a consequence of the growth mode of CuInS2 thin films.

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We demonstrate the direct heteroepitaxial growth of the ternary semiconductor CuGaS2 on Si(111) substrates by means of molecular beam epitaxy. X-ray diffraction data prove the epitaxial growth of the CuGaS2 films in the highly ordered chalcopyrite structure. Using photoluminescence, we are able to detect strong excitonic emissions up to room temperature, while photocurrent spectra reveal the A, B, and C valence-to-conduction-band transitions as they are typical for the tetragonal chalcopyrite structure.

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