Epitaxial and polycrystalline CuInS2 thin films: A comparison of opto-electronic properties

Eberhardt, J.; Schulz, Kristian; Metzner, H.; Cieslak, J.; Hahn, Trudi Bellardo; Reislöhner, U.; Gossla, M.; Hudert, Florian; Goldhahn, R.; Witthuhn, W.

doi:10.1016/j.tsf.2006.12.039

Cited by 18 publications

(16 citation statements)

References 17 publications

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“…The peak at 1.4 eV was also assigned to a donoracceptor pair recombination in which generated electrons are trapped at V S and holes at either V In (In +3 ion vacancies) or Cu In [56]. The peak at 1.46 and 1.48 eV was reported to be donor-to-valence band transition and free-to-bound transition, respectively [57,58]. The peak between 1.51 and 1.53 eV belongs to the exciton emission of the CIS and dominates the luminescence in most of the sulfurized films.…”

Section: Resultsmentioning

confidence: 99%

“…In the case of CuInSe 2 film, an MoSe 2 layer having an appropriate thickness in the range of 100-200 nm provides adhesion and Ohmic contact at the CIS/Mo interface; otherwise, MoSe 2 layers having undesirable thicknesses result in film peel-off [55]. The peak at 1.46 and 1.48 eV was reported to be donor-to-valence band transition and free-to-bound transition, respectively [57,58]. Therefore, no peel-off was observed in the 450°C film; however, peel-off is more significant for the 500 and 550°C films.…”

Section: Roughness (Nm)mentioning

confidence: 99%

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Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Tsai

Mishra

et al. 2013

Int. J. Energy Res.

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SUMMARY Photovoltaic CuInS2 (CIS) thin films were prepared from thermally evaporated Cu/In precursors, having various Cu/In ratios, under different sulfurization conditions. The sulfurization was carried out in a quartz tube furnace under a steady or flowing H2S/Ar gas mixture at various temperatures ranging from 450 to 550 °C. The effects of the Cu/In ratio and sulfurization condition on the grain size, surface morphology, surface roughness, microstructure and defect formation of the resulting CIS films were examined. It was found that the effects depend on the processing conditions. Particularly, we show that sub‐bandgap generated defects can be inferred by photoluminescence data. Selected CIS thin films were used as absorber layers for the fabrication of thin film solar cells. The best solar cell efficiency of 6.29% was obtained from the 500 °C‐sulfurized absorber layer having a Cu/In ratio of 1.8. Effect of absorber layer characteristics on the cell efficiency was also discussed. Copyright © 2013 John Wiley & Sons, Ltd.

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Section: Resultsmentioning

confidence: 99%

Section: Roughness (Nm)mentioning

confidence: 99%

Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Tsai

Mishra

et al. 2013

Int. J. Energy Res.

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“…In a previous publication [11], it was shown that the apparent blue shift of the excitonic emission at 1.53 eV between 5 and 80 K can be explained by the transition from the bound (BX A ) to the free A-exciton (FX A ) with increasing temperature. In a previous publication [11], it was shown that the apparent blue shift of the excitonic emission at 1.53 eV between 5 and 80 K can be explained by the transition from the bound (BX A ) to the free A-exciton (FX A ) with increasing temperature.…”

Section: Resultsmentioning

confidence: 96%

Optical Properties of Strained Polycrystalline CuInS₂ Layers

et al. 2007

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Using molecular beams, polycrystalline thin CuInS 2 (CIS) films of different thicknesses were grown on Si substrates covered with a sputtered Mo-buffer layer. Systematic photoluminescence and photoreflectance measurements were performed to investigate the influence of strain -introduced during growth -on the optical properties. The transition energy of the free A-exciton (FX A ) decreases with increasing tensile strain caused by (i) increasing thickness of the Mo buffer layer and (ii) decreasing thickness of the CIS layer. Furthermore, the energetic splittings between FX A , FX B , and FX C increase with increasing tensile strain. When combined with X-ray diffraction data, the oscillator strengths of the excitonic transitions yield information on the strain distribution within the films.

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“…The spectrum of CuInS 2 (x ¼ 1.00) mainly consists of three peaks at about 1.38, 1.34, and 1.30 eV. These peaks seem to correspond to the reported donoracceptor pair transitions [19]. Considering the composition, the emission at 1.38 eV can be explained as the transition between the donor (In Cu ) and the copper vacancy (V Cu ) [20].…”

Section: Originalmentioning

confidence: 99%

Crystallographic and optical properties of CuInS₂‐Cu₂ZnSnS₄ crystals

Oishi¹,

Shimizu²,

Takeuchi³

et al. 2017

Physica Status Solidi (b)

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CuInS2‐Cu2ZnSnS4 crystals were synthesized by the pressure‐less sintering method using CuInS2 and Cu2ZnSnS4 powders grown from each melt. The x values in Cu2(2In)x(ZnSn)(1.00−x)S4 were evaluated by energy dispersive spectroscopy. Lattice constants were derived from powder X‐ray diffraction analysis by Rietveld method. Lattice constants of CuInS2 phase changed linearly at x ≥ 0.49. On the other hand, lattice constants of Cu2ZnSnS4 phase changed almost linearly at x ≤ 0.37. In Raman spectra, peak positions of A (Itrue4¯) or A1 (Itrue4¯2m) mode of Cu2ZnSnS4 phase changed toward the lower wavenumber side linearly with increasing x. A1 mode of CuInS2 phase became weaker with decreasing x, and disappeared below x = 0.49. In PL spectra measured at 15 K, broad peaks at about 1.26 eV were observed at 0.00 ≤ x ≤ 0.85.

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Epitaxial and polycrystalline CuInS2 thin films: A comparison of opto-electronic properties

Cited by 18 publications

References 17 publications

Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Optical Properties of Strained Polycrystalline CuInS₂ Layers

Crystallographic and optical properties of CuInS₂‐Cu₂ZnSnS₄ crystals

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Epitaxial and polycrystalline CuInS2 thin films: A comparison of opto-electronic properties

Cited by 18 publications

References 17 publications

Effects of sulfurization and Cu/In ratio on the performance of the CuInS2solar cell

Effects of sulfurization and Cu/In ratio on the performance of the CuInS2solar cell

Optical Properties of Strained Polycrystalline CuInS2 Layers

Crystallographic and optical properties of CuInS2‐Cu2ZnSnS4 crystals

Contact Info

Product

Resources

About

Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Effects of sulfurization and Cu/In ratio on the performance of the CuInS₂solar cell

Optical Properties of Strained Polycrystalline CuInS₂ Layers

Crystallographic and optical properties of CuInS₂‐Cu₂ZnSnS₄ crystals