Structural properties of MBE grown Cu(In,Ga)S2 layers on Si

Preparation of Cu(In,Ga)S2Absorber Layers for Thin Film Solar Cell by Annealing of Electrodeposited Cu-Ga-S Precursor Layers

“…As the annealing temperature beyond 350 • C, the element In, diffused from the ITO substrate, incorporate to the coelectrodeposited Cu-Ga-S precursor film and subsequently the quaternary chalcopyrite structure of CIGS forms as indicated the appearance of the main peaks corresponding to the CIGS phases which have been reported in the literatures. 29,30 An annealing treatment at 400 • C is necessary in order to obtain pure crystallized CIGS. No detectable secondary phase could be found.…”

Characteristics of stacked CuInS2 and CuGaS2 layers as determined by the growth sequence

“…According to the Powder Diffraction Standards, the (112) peak of the chalcopyrite structure can be found at 2θ = 27.9°c orresponding to 3.20 Å interplanar spacing for the CuInS 2 [11], and at 2θ = 29.1°or 3.06 Å interplanar spacing for the CuGaS 2 [12]. For the quaternary compounds CuIn 1 − x Ga x S 2 , it has been reported that the lattice parameter varies linearly with the Ga content or x [13]. Two differentiated diffraction peaks near to those expected for CuInS 2 and CuGaS 2 have been identified in the GIXRD patterns of the present stacked layers, the corresponding peak intensity and experimental interplanar spacing are plotted as a function of the grazing incidence angle in Figs.…”

Characterization of Cu(In,Ga)S2 crystals grown from the melt

“…There are many reports on the growth of CuInS 2 thin films on Si substrates [2][3][4][5][6][7][8][9][10][11][12]. Recently, the growth of CuGaS 2 and Cu(In,Ga)S 2 on Si has been reported [13][14][15][16]. We have also reported the growth of CuGaS 2 , CuInS 2 and Cu(In, Ga)S 2 on Si(100) [17][18][19].…”