Silicon-on-Insulator (SOI) is useful for analog/digital CMOS circuits at high temperature due to reduction of leakage currents. This is mainly due to the reduction of the junction areas of the SO1 CMOS transistors. Temperature dependence of SO1 CMOS transistors (-55 to 275°C) is modeled and compared to experiments. The model is used to predict the results of a high temperature 64K CMOS static RAM.
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