Using low-temperature poly-silicon thin-film transistors (LTPS TFTs) as a basis, a pixel circuit for an active matrix organic light-emitting diode (AMOLED) with narrow bezel displays was developed. The pixel circuit features mono-type scanning signals, elimination of static power lines, and pixel-integrated emitting control functions. Therefore, gate driver circuits of the display bezel can be simplified efficiently. In addition, the pixel circuit has a high-resolution design due to an increase of the pulse width of the scan signal to extend the threshold voltage and internal–resistance drop (IR drop) detection period. Further, regarding the influences of process–voltage–temperature (PVT) variation in the pixel circuit, comparison investigations were carried out with the proposed circuit and other pixel circuits with mono-type scanning signals using Monte Carlo analysis. The feasibility of the proposed pixel circuit is well demonstrated, as the current variations can be reduced to 2.1% for the supplied power reduced from 5 V to 3 V due to IR drop, and the current variation is as low as 10.6% with operating temperatures from –40 degrees to 85 degrees.
An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) with dual-gate structures is developed. The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges, which are controlled by gate voltage. It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance (𝐶TI/𝐶BI). Incorporating the proposed model with Verilog-A, a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations. Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.
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