The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

Hsieh, E. R.; Lu, Peggy Joy; Chung, Steve S.; Chang, Kuang-Yi; Liu, C. H.; Ke, J. C.; Yang, Cheng; Tsai, C. T.

doi:10.1109/vlsit.2014.6894389

Cited by 15 publications

(3 citation statements)

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“…They can be considered as a conduction path with traps nearby. Traps serve as a switch to control the current flow through the filaments [10], in which the leakage path is responsible for the magnitude of the current flow while the interaction between the trap and the leakage path represents the trapping between both sides. Then, we will focus on the characterization of traps, the experimental observations of three different observations of the random telegraph noise behavior, called regular RTN and irregular RTN will be presented in more details.…”

Section: Resultsmentioning

confidence: 99%

New observations on the regular and irregular noise behavior in a resistance random access memory

Chen

Huang

Chung

et al. 2014

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)

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In this paper, a new type of noise, different from the conventional Random Telegraph Noise (RTN), has been found and analyzed in a resistance random access memory (RRAM). The regular RTN signal is governed by the trapping and detrapping of the electrons. It will appear regularly with a two-level current and the amplitude of the RTN is smaller. However, an abnormal noise, called giant noise, was observed from the oxygen migration. The amplitude of the giant noise is much larger than the RTN one. Also, two different types of giant noise were observed depending on the movement of the oxygen vacancies. All of the above various types of noise might play an important role in the readout error in an RRAM. Therefore, these noise effects need further attention in the design of RRAM.

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Section: Resultsmentioning

confidence: 99%

New observations on the regular and irregular noise behavior in a resistance random access memory

Chen

Huang

Chung

et al. 2014

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)

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“…7,8) These problems can cause unexpected effects such as shift ΔV th in threshold voltage V th , time-dependent dielectric breakdown, and bias temperature instability (BTI) and can shorten the life expectancy of MOSFETs. [9][10][11][12] BTI occurs when a positive bias and a negative bias are applied to a gate at high temperatures for n-type MOSFETs (nMOSFETs) and p-type MOSFETs (pMOSFETs) in a CMOS circuit, respectively. BTI degrades electrical parameters such as V th , drain current I d I d,lin.…”

Section: Introductionmentioning

confidence: 99%

Characterization of fast relaxation by oxide-trapped charges under BTI stress on 64 nm HfSiON/SiO₂ MOSFETs

Kim¹,

Roh²,

Kang³

2020

Jpn. J. Appl. Phys.

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For HfSiON/SiO 2 n-type and p-type MOSFETs with a channel length L = 64 nm, the fast relaxation effect of oxide-trapped charges Q ox during interrupt for bias temperature instability (BTI) degradation measurement were investigated, and a model that compensated for this effect to predict lifetime t L was proposed. Experimental results show that the fast relaxation of Q ox during threshold-voltage V th measurement rapidly saturates within 1 s and is exponentially increasing for gate stress voltage V g,str and exponentially decreasing for measurement duration t m but does not affect the BTI degradation mechanism. Using the V g,str and t m dependence of Q ox 's fast relaxation under BTI stress, t L prediction model was proposed to compensate the recovery effect by V th measurement from BTI degradation measured in slow measurement (SM) condition with t m > 1 μs. The proposed model increases the precision of the estimate of t L by considering the recovery effect of Q ox even in SM.

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“…4,5) High-k metal gate MOSFETs still have reliability and variability issues, such as random telegraph noise (RTN), bias temperature instability (BTI), and trapassisted tunneling (TAT), attributed mainly to trap performance and influenced by gate bias and temperature. 6,7) In HfO x material, oxygen vacancies, which are the most probable intrinsic defects capturing and emitting electrons, result in the degradation of nMOSFETs. [8][9][10][11] Switching trapping=detrapping of oxygen vacancies induces RTN in current and threshold voltage, while BTI is mainly caused by timedependent charge storage, which results in the degradation of channel carrier mobility and threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Li¹,

Jiang²,

Lun³

et al. 2016

Jpn. J. Appl. Phys.

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Degradation behaviors in the high-k/metal gate stacks of nMOSFETs are investigated by three-dimensional (3D) kinetic Monte-Carlo (KMC) simulation with multiple trap coupling. Novel microscopic mechanisms are simultaneously considered in a compound system: (1) trapping/detrapping from/to substrate/gate; (2) trapping/detrapping to other traps; (3) trap generation and recombination. Interacting traps can contribute to random telegraph noise (RTN), bias temperature instability (BTI), and trap-assisted tunneling (TAT). Simulation results show that trap interaction induces higher probability and greater complexity in trapping/detrapping processes and greatly affects the characteristics of RTN and BTI. Different types of trap distribution cause largely different behaviors of RTN, BTI, and TAT. TAT currents caused by multiple trap coupling are sensitive to the gate voltage. Moreover, trap generation and recombination have great effects on the degradation of HfO2-based nMOSFETs under a large stress.

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The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

Cited by 15 publications

References 0 publications

New observations on the regular and irregular noise behavior in a resistance random access memory

New observations on the regular and irregular noise behavior in a resistance random access memory

Characterization of fast relaxation by oxide-trapped charges under BTI stress on 64 nm HfSiON/SiO₂ MOSFETs

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

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The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

Cited by 15 publications

References 0 publications

New observations on the regular and irregular noise behavior in a resistance random access memory

New observations on the regular and irregular noise behavior in a resistance random access memory

Characterization of fast relaxation by oxide-trapped charges under BTI stress on 64 nm HfSiON/SiO2 MOSFETs

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

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Characterization of fast relaxation by oxide-trapped charges under BTI stress on 64 nm HfSiON/SiO₂ MOSFETs