This paper evaluates how channel length L affects the drain avalanche hot carrier degradation (DAHC) degradation mechanism of HfSiON/SiO 2 pMOSFETs that have strained Si/SiGe channel. DAHC degradation occurred as L was to reduced < 70 nm, and the amount of degradation increased as L decreased. In the early stage of stress, DAHC degradation increased positively due to generation of negative oxide charges -Q ox , but gradually-generated interface states N it neutralize -Q ox , so a transition point occurs and eventually DAHC increases negatively after sufficient stress time t s . The distribution of DAHC degradation was also analyzed after t s = 4000, 40000 s. The effects of additional generation of -Q ox and N it on DAHC degradation contribute more near the drain edge than to the center region, and increase as L decreases. Therefore, further research on the DAHC degradation mechanism should be conducted to predict the reliability of HfSiON/SiO 2 pMOSFETs with mechanical strain engineering.
For HfSiON/SiO 2 n-type and p-type MOSFETs with a channel length L = 64 nm, the fast relaxation effect of oxide-trapped charges Q ox during interrupt for bias temperature instability (BTI) degradation measurement were investigated, and a model that compensated for this effect to predict lifetime t L was proposed. Experimental results show that the fast relaxation of Q ox during threshold-voltage V th measurement rapidly saturates within 1 s and is exponentially increasing for gate stress voltage V g,str and exponentially decreasing for measurement duration t m but does not affect the BTI degradation mechanism. Using the V g,str and t m dependence of Q ox 's fast relaxation under BTI stress, t L prediction model was proposed to compensate the recovery effect by V th measurement from BTI degradation measured in slow measurement (SM) condition with t m > 1 μs. The proposed model increases the precision of the estimate of t L by considering the recovery effect of Q ox even in SM.
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