Microelectronics Reliability
 2017
DOI: 10.1016/j.microrel.2017.03.035
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Fast and accurate method of lifetime estimation for HfSiON/SiO2 dielectric n-MOSFETs under positive bias temperature instability

Giyoun Roh
1
,
Hyeokjin Kim
2
,
Cheolgyu Kim
3
et al.
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