Channel-length dependence of mechanical stress effect by hybrid shallow trench isolation on NBTI degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO2p-channel MOSFETs with strained Si/SiGe channel

“…To advance understanding of the L dependence behavior of DAHC degradation near the drain edge region, a method of examining the ΔV th distribution along the lateral direction in the effective channel region L eff was used. 34) V th in L eff is not uniform, so by using the relation between the equation of I d flowing through L eff and V th at each micro-section V th,i when L is divided into n parts, the measured V th and ΔV th can be expressed as 25,34) ( )…”

“…31,32) To analyze the effective channel length L eff of experimental devices according to V d -measurement conditions, the channel length modulation factor λ was obtained from the curve of I d versus drain-source voltage V ds that was measured by sweeping 33) Then, the distribution of DAHC degradation along the lateral direction of the channel region was investigated using λ and threshold voltage shift ΔV th measured while varying V d from −0.05 to −1.0 V before and after DAHC stress. 25,34) All electrical measurements were performed at 27 °C using a Keysight B1500A semiconductor device analyzer.…”

“…21,22) As a result, in these embedded SiGe channel high-k pMOSFETs, DAHC stress causes more severe degradation than CHC stress, unlike HC-induced degradation trends in conventional deep-submicron devices. 23,24) In high-k pMOSFETs that have a strained Si/ SiGe channel, the mechanical strain effect in the drain edge region increases as the dimension scales down, 25) so the mechanism of DAHC degradation in these devices should be analyzed.…”

Towards tilt-free in plasma etching

“…Plasma etching is a process that matters for microstructures manufacturing in both scientific and industrial communities [1,2], which can be widely applied in various devices (such as microelectromechanical systems (MEMS) [3,4], capacitors [5,6], metal-oxide-semiconductor field effect transistors (MOSFETs) [7,8], and memory devices [9,10]) and device related processes (such as advanced packaging [11,12] and device isolation [13,14]). In detail, MEMS gyroscope based on the Coriolis force principle contains parallel plate capacitor accelerators in two independent directions, and the higher depth/verticality of the silicon microstructure can increase the 4 Contributed equally to this work.…”

Silicon and Germanium Vertical Super-Thin Body (VSTB) FET: A Comparative Performance Overview Including Architectural Stress-Strain Impact

“…Further, various researches have revealed that a miniaturized device in nanoscale may encounter the stress-strain impact on its electrical performance. [41][42][43][44][45][46][47][48][49][50][51][52][53] In this regard, the basic structure of a VSTB FET also indubitably exerts heavy stress over the thin vertical body as it is surrounded by thick dielectric walls and other parts of the device. Therefore, the study of the stress-strain influence on the performance of a VSTB FET is an integral part of its reliability establishment.…”