The RTN measurement technique on leakage path finding in advanced high-k metal gate CMOS devices

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

“…Data also reveal that most cells eventually stuck at LRS even after raising reset time to 60 μs. To investigate the root cause of reset degradation during cycling, low frequency noise (LFN) found in the read current is investigated and is reported as an index reflecting the properties of CFs [39][40][41]. In our previous work [31], cells with different densities of CFs inside its TMO layers exhibit distinct noise spectrum in its read current.…”

Reset Variability in Backfilled Resistive Random Access Memory and Its Correlation to Low Frequency Noise in Read

“…To directly monitor the change in CF properties in transition metal oxide (TMO) layer, imaging tools, such as transmission electron microscopy (TEM) and atomic force microscope (AFM), were used for detail physical analysis [25]- [28]. In addition, monitoring random telegraph noise (RTN) and LFNs of RRAM have also been proposed as a pathway for probing the miniscule changes in the shape and distribution of CFs [29]- [32]. In these proposed studies, properties of defects and CFs in dielectric film are characterized by this unique charge trapping/detrapping behavior.…”

“…On the other hand, the dependence of capture/emission time constants on bias voltage was studied to investigate trap location in dielectric film [31]. Models including multiple time constants were reported to further track the shifts in trap-sites at different stress stages [32]. Aside from analysis of properties of defects and traps in the TMO film, RTN was also regarded as an index to examine endurance of cells.…”