An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

Abstract

As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurrence of reset failure during cycling test. In addition, a recovery treatment is demonstrated to restore the cyclability of RRAM. An early detection circuit for vulnerable cells in an array is also proposed for further improving the overall endurance of an RRAM array. Lifetime of RRAM can be extended to over 10 k cycles without fail bits in an array.

Tamper-sensitive pre-formed ReRAM-based PUFs: Methods and experimental validation

“…Here, the two states are distinguishable by a relatively large read margin. Recently, the ReRAM has improved its endurance switching cycles, and additional circuitry has been implemented to detect early failures for improved reliability (Kao et al, 2021).…”

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

“…It is essential to develop a high-performance non-volatile memory that can be implemented as hardware. The performance indicators of non-volatile memory are linearity [ 10 , 11 , 12 , 13 ], retention [ 14 , 15 , 16 ], endurance [ 17 , 18 , 19 ], the number of conductance states [ 20 , 21 , 22 , 23 ], power consumption, [ 24 , 25 , 26 , 27 ] and device variation [ 28 , 29 , 30 , 31 , 32 ]. Improvement of synaptic characteristics by optimization of the device can simply enhance the performance of neuromorphic systems.…”