We report a very simple process to fabricate high performance filter on Si at 40 GHz using proton implantation. The filter has only 3.4-dB loss at peak transmission of 40 GHz with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-m SiO 2 isolated Si has much worse transmission and reflection loss. This is the first demonstration of high performance filter at millimeter-wave regime on Si with process compatible to current VLSI technology.
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