RF MIM capacitors using high-K Al/sub 2/O/sub 3/ and AlTiO/sub x/ dielectrics

Chen, S.B.; Lai, Chun‐Hung; Chin, Albert; Hsieh, J.C.; Liu, J.

doi:10.1109/mwsym.2002.1011593

Cited by 20 publications

(23 citation statements)

References 10 publications

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“…Among these materials, aluminum titanate(Al 2 TiO 5 ) is a high-k dielectric with good radio frequency performance. Thin films of Al 2 TiO 5 have been deposited by various techniques such as thermal oxidation of Al/Ti bilayer formed by vacuum evaporation [8], reactive sputtering [9], Low pressure chemical vapor deposition [10,11], nanoparticle achieved by sol-gel process [12,13]. The thermally oxidized AlTiO x thin film MIM capacitors exhibited capacitance density of about 1μF/cm 2 and high leakage current density of about 10 -4 A/cm 2 due to deficiency of oxygen in the films [8].…”

Section: Introductionmentioning

confidence: 99%

“…Thin films of Al 2 TiO 5 have been deposited by various techniques such as thermal oxidation of Al/Ti bilayer formed by vacuum evaporation [8], reactive sputtering [9], Low pressure chemical vapor deposition [10,11], nanoparticle achieved by sol-gel process [12,13]. The thermally oxidized AlTiO x thin film MIM capacitors exhibited capacitance density of about 1μF/cm 2 and high leakage current density of about 10 -4 A/cm 2 due to deficiency of oxygen in the films [8]. Sputter deposited Al 2 TiO 5 films are used as semitransparent silicon thin film solar cell useful for building integrated photovoltaic system [9], Low pressure chemical vapor deposition films formed were amorphous and their refractive index decreased from 1.92 to 1.78 and the dielectric constant decreased with increase of substrate temperature from 350 o C to 500 o C [10,11] respectively.…”

Section: Introductionmentioning

confidence: 99%

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Growth and Characterization of Reactive DC Magnetron Sputtered Aluminum Titanate Thin Films

Addepalli

Uthanna

2015

ILCPA

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ABSTRACT. Aluminum titanate (Al 2 TiO 5 ) films were deposited on to unheated p-silicon and quartz substrates by reactive DC magnetron sputtering of Al 67 Ti 33 target at an oxygen flow rate of 8 sccm and at sputter pressure of 2x10 -3 mbar. The as-deposited films were annealed in oxygen ambient at 600 o C. The as-deposited and annealed films were characterized for chemical composition core level binding energies, crystallographic structure and optical properties. The asdeposited films were amorphous in nature while those annealed in oxygen were of polycrystalline with orthorhombic structure. Atomic force micrographs confirmed the fine grain growth of the films and the size of the grain increased in annealed films. The films showed optical transmittance of above 85 % in the visible region. The optical band gap of the films decreased from 4.58 eV to 4.50 eV.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Reactive DC Magnetron Sputtered Aluminum Titanate Thin Films

Addepalli

Uthanna

2015

ILCPA

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“…Though they provide good voltage linearity and low temperature coefficients, their capacitance density are limited by low dielectric constants, 7. Recently, thin layer of Al 2 O 3 has been applied to the MIM capacitor, but it still provides low dielectric constant, 9 (Chen et al 2002). Although the capacitance density can be improved by reduced dielectric thickness, it causes a large leakage current and poor voltage linearity property (Karroy et al 1999).…”

Section: Introductionmentioning

confidence: 99%

A wireless powered fully integrated SU-8-based implantable LC transponder

et al. 2010

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In this work, we report a SU-8-based fully integrated miniaturized inductively powered LC transponder for generic implantable wireless sensor applications. It consists of a 1 mm diameter octagonal spiral inductor and a micro fabricated MIM (metal insulator metal) capacitor. Polyvinylidene Fluoride-Trifluoroethylene (PVDF-TrFE) copolymer is applied as a dielectric material for the capacitor fabrication due to its high dielectric constant. The 1 mm diameter, 154 nH spiral inductor is built on top of the capacitor. The capacitor and the inductor are in parallel connection through SU-8 via holes. SU-8 is used as a packaging material due to its biocompatibility, and also it serves as an insulator between the capacitor and the spiral inductor. The operating frequencies of the LC tanks are decided by the sizes of the capacitors (45 9 45, 55 9 55, 95 9 95 and 100 9 100 lm), and measured operating frequency range is from 385 to 485 MHz. The fabricated LC tanks are held to the power transmitting coil coaxially at distances of 2, 5, 7 and 10 mm, and rectified induced voltage at the LC tank is 8.5 V with 29 dBm input power at a 5 mm distance.

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“…SiO 2 and Si 3 N 4 are commonly used for MIM capacitors, but the capacitance densities of these materials are rather low, only about ∼2 fF/μm 2 [1,2]. Recently, Al 2 O 3 , Ta 2 O 5 and HfO 2 dielectrics, which have a higher dielectric constant (k), have been widely investigated with a view to enhancing the capacitance density of these capacitors [3][4][5][6][7][8][9][10]. Al 2 O 3 film has a low leakage current and a high capacitance density of 5 fF/μm 2 , but it also has a large VCC (∼2000 ppm/V 2 ) [3,4].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, Al 2 O 3 , Ta 2 O 5 and HfO 2 dielectrics, which have a higher dielectric constant (k), have been widely investigated with a view to enhancing the capacitance density of these capacitors [3][4][5][6][7][8][9][10]. Al 2 O 3 film has a low leakage current and a high capacitance density of 5 fF/μm 2 , but it also has a large VCC (∼2000 ppm/V 2 ) [3,4]. Al 2 O 3 doped Ta 2 O 5 film was reported to have a high capacitance density and a low leakage current, but a low Q-value of approximately 40 [5].…”

Section: Introductionmentioning

confidence: 99%

Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications

et al. 2006

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BaTi 4 O 9 thin films were grown on a Pt/Ti/SiO 2 /Si substrate using RF magnetron sputtering. A homogeneous BaTi 4 O 9 crystalline phase developed in the films deposited at 550 • C and annealed above 850 • C. When the thickness of the film was reduced, the capacitance density and leakage current density increased. Furthermore, the dielectric constant was observed to decrease with decreasing film thickness. The BaTi 4 O 9 film with a thickness of 62 nm exhibited excellent dielectric and electrical properties, with a capacitance density of 4.612 fF/μm 2 and a dissipation factor of 0.26% at 100 kHz. Similar results were also obtained in the RF frequency range (1-6 GHz). A low leakage current density of 1.0 × 10 −9 A/cm 2 was achieved at ±2 V, as well as small voltage and temperature coefficients of capacitance of 40.05 ppm/V 2 and -92.157 ppm/ • C, respectively, at 100 kHz.

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RF MIM capacitors using high-K Al/sub 2/O/sub 3/ and AlTiO/sub x/ dielectrics

Cited by 20 publications

References 10 publications

Growth and Characterization of Reactive DC Magnetron Sputtered Aluminum Titanate Thin Films

Growth and Characterization of Reactive DC Magnetron Sputtered Aluminum Titanate Thin Films

A wireless powered fully integrated SU-8-based implantable LC transponder

Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications

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