The dielectric and electrical properties of a BaTi4O9 film were investigated in order to evaluate its potential use in metal-insulator-metal (MIM) capacitors for rf/mixed signal integrated circuits. A high capacitance density of 4.62fF∕μm2 along with a low tanδ of 0.0025 were obtained at 100 kHz. A high capacitance density of 4.12fF∕μm2 and a high quality factor of 322 were also achieved at 2 GHz. The leakage current density was approximately 1nA∕cm2 at ±2V. Small linear and quadratic voltage coefficients of capacitance of 110ppm∕V and 40.05ppm∕V2, respectively, and a small temperature coefficient of capacitance of −92.157ppm∕°C at 100 kHz were obtained. These results demonstrate that the BaTi4O9 film is a good candidate material for MIM capacitors.

BaTi 4 O 9 thin films were grown on a Pt/Ti/SiO 2 /Si substrate using RF magnetron sputtering. A homogeneous BaTi 4 O 9 crystalline phase developed in the films deposited at 550 • C and annealed above 850 • C. When the thickness of the film was reduced, the capacitance density and leakage current density increased. Furthermore, the dielectric constant was observed to decrease with decreasing film thickness. The BaTi 4 O 9 film with a thickness of 62 nm exhibited excellent dielectric and electrical properties, with a capacitance density of 4.612 fF/μm 2 and a dissipation factor of 0.26% at 100 kHz. Similar results were also obtained in the RF frequency range (1-6 GHz). A low leakage current density of 1.0 × 10 −9 A/cm 2 was achieved at ±2 V, as well as small voltage and temperature coefficients of capacitance of 40.05 ppm/V 2 and -92.157 ppm/ • C, respectively, at 100 kHz.

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A high capacitance density of 4.84 fF/µm 2 and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm 2 Ti 4 O 12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/µm 2 and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of −295 ppm/V 2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of −136 ppm/ • C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/V 2 and −738 ppm/V, respectively, with a low TCC of 169 ppm/ • C at 100 kHz. Index Terms-Capacitor, high-κ, metal-insulator-metal (MIM), temperature coefficient of capacitance (TCC), voltage coefficient of capacitance (VCC).