High-density MIM capacitors using Al2O3 and AlTiOx dielectrics

Chen, S.B.; Lai, Chun‐Hung; Chin, Albert; Hsieh, J.C.; Liu, J.

doi:10.1109/55.992833

Cited by 163 publications

(59 citation statements)

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“…[ 27 ] The increase of the HRS leakage current with increasing stress cycles is also found in MIM capacitors and is due to stress-induced leakage current (SILC) via generated defects. [ 28 ] The decrease in LRS current after continuous stress may be related to the redistribution of charged oxygen/nitrogen vacancies [ 29 ] under a switching electric fi eld, where the SCLC conduction for LSR current is highly related to the traps. The mechanical endurance is the necessary factor for fl exible electronics.…”

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confidence: 99%

Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance

2010

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Plastic-substrate-based electronic devices are attractive because of their inherit merits of low cost, light weight, environmentally friendly low temperature processing, and the application in fl exible displays and integrated circuits (ICs). Fast progress of logic ICs using thin-fi lm transistors (TFT) on plastic has been demonstrated. However, one fundamental challenge for plastic electronics is the lack of good performance non-volatile memory (NVM) devices. [1][2][3][4][5] This is due to the degraded dielectric quality of charge-based fl ash (CTF) memory from the limited low temperature process. [ 2 ] Alternatively, the resistive random access memory (RRAM) [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] shows promising NVM performance on plastic even when processed at low temperature, but the large set and reset currents are the basic limitation for high-density and low-power operation. In addition, the large switching energies degrade the endurance due to excessive stress.In this paper, record high-performance NVM has been demonstrated on low cost polyimide substrate. A very low set current of 1.6 μ A at 3 V (4.8 μ W) and reset current of −0.5 nA at −2 V (1 nW) were needed to reach the bistable resistance state, which led to a large memory window with a high-to low-resistance state ratio (HRS/LRS) of 9 × 10 2 . Additionally, good retention was obtained with a small HRS/LRS decay from the initial 9 × 10 2 to 7 × 10 2 at 85 ° C for 10 4 s. Furthermore, excellent endurance of 10 5 cycles was measured at a very fast 50 ns switching time. This is the lowest reported switching power NVM on plastic with excellent 10 5 cycling endurance and good retention. The excellent NVM performance on fl exible plastic is due to the using novel ultra-low power hopping conduction mechanism [ 22 ] rather than the conductive fi lament in conventional RRAM. [ 17 , 18 ] This new RRAM device sets a new standard for NVM performance on low-cost fl exible substrates. Figure 1 shows the devices fabricated of Ni/GeO x /HfON/ TaN RRAM on fl exible polyimide substrate. The simple metalinsulator-metal (MIM) structure is useful for embedded and 3D integration.Figure 2 a shows the swept current-voltage ( I-V ) curves of Ni/GeO x /Hf 0.38 O 0.39 N 0.23 /TaN RRAM on fl exible polyimide. The arrows indicate the sweeping direction. The Hf 0.38 O 0.39 N 0.23 (HfON) composition was determined by X-ray photoelectron spectroscopy (XPS), which was controlled by O 2 /N 2 in a sputter system. The HfON has been used as the charge-trapping layer for CTF [ 23 ] NVM due to its high density traps and deep trapping energy. A very low self-compliance set current of 1.6 μ A at 3 V, an even lower reset current of -0.5 nA at -2 V, and a large HRS/LRS memory window of 9 × 10 2 at 0.5 V were all obtained at the same time. These are the lowest set and reset currents of RRAM devices on a plastic fi lm [3][4][5] and are much lower than the conventional RRAM using metallic-fi lament conduction. [ 17 , 18 ] The asymmetric switching I-V curves are ascribed ...

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Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance

2010

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“…SiO 2 and Si 3 N 4 are commonly used for MIM capacitors, but the capacitance densities of these materials are rather low, only about ∼2 fF/μm 2 [1,2]. Recently, Al 2 O 3 , Ta 2 O 5 and HfO 2 dielectrics, which have a higher dielectric constant (k), have been widely investigated with a view to enhancing the capacitance density of these capacitors [3][4][5][6][7][8][9][10]. Al 2 O 3 film has a low leakage current and a high capacitance density of 5 fF/μm 2 , but it also has a large VCC (∼2000 ppm/V 2 ) [3,4].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, Al 2 O 3 , Ta 2 O 5 and HfO 2 dielectrics, which have a higher dielectric constant (k), have been widely investigated with a view to enhancing the capacitance density of these capacitors [3][4][5][6][7][8][9][10]. Al 2 O 3 film has a low leakage current and a high capacitance density of 5 fF/μm 2 , but it also has a large VCC (∼2000 ppm/V 2 ) [3,4]. Al 2 O 3 doped Ta 2 O 5 film was reported to have a high capacitance density and a low leakage current, but a low Q-value of approximately 40 [5].…”

Section: Introductionmentioning

confidence: 99%

Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications

et al. 2006

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BaTi 4 O 9 thin films were grown on a Pt/Ti/SiO 2 /Si substrate using RF magnetron sputtering. A homogeneous BaTi 4 O 9 crystalline phase developed in the films deposited at 550 • C and annealed above 850 • C. When the thickness of the film was reduced, the capacitance density and leakage current density increased. Furthermore, the dielectric constant was observed to decrease with decreasing film thickness. The BaTi 4 O 9 film with a thickness of 62 nm exhibited excellent dielectric and electrical properties, with a capacitance density of 4.612 fF/μm 2 and a dissipation factor of 0.26% at 100 kHz. Similar results were also obtained in the RF frequency range (1-6 GHz). A low leakage current density of 1.0 × 10 −9 A/cm 2 was achieved at ±2 V, as well as small voltage and temperature coefficients of capacitance of 40.05 ppm/V 2 and -92.157 ppm/ • C, respectively, at 100 kHz.

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“…A high capacitance density is required for a MIM capacitor to allow for small area, to increase the circuit density, and to further reduce the manufacturing costs. Therefore, adoption of high-k oxides is a very efficient way to increase the capacitance density [24].The above examples illustrate that high-k oxides will be necessary in nearly all fields of applications in microelectronics, sooner or later. For stack-cell structured DRAM capacitors and for precision MIM capacitors for mixed signal applications, products with high-k oxide inside are already on the market.…”

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High-K: Latest Developments and Perspectives

Bauer

Lemberger

Erlbacher

et al. 2008

MSF

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Abstract. The paper reviews recent progress and current challenges in implementing high-k dielectrics in microelectronics. Logic devices, non-volatile-memories, DRAMs and low power mixedsignal components are found to be the technologies where high-k dielectrics are implemented or will be introduced soon. Two gate architectures have to be considerd: MOS with metal as gate electrode and MIM. In particular, Hf-silicates for logic and NVM devices in conventional MOS architecture and ZrO 2 for DRAM cells in MIM architecture are discussed. Fields of applicationsThe breakthrough and thus the enormous growth of the microelectronics, especially in the Information Technology, in the past few decades is based, to a large extend, on the SiO 2 /Si system which was therefore called "a simple gift of nature". Gate dielectrics consisting of ultra thin silicon dioxide layers are the key element in conventional silicon based microelectronic devices. In the very beginning of the microelectronics, the thickness of the SiO 2 gate oxide was a few hundred nanometers. Nowadays, state-of-the-art MOSFETs (metal oxide semiconductor field effect transistor) require gate oxide thicknesses of just a few atomic layers. Until recently, the continuous scaling of the ULSI (ultra large scale integration) devices has been accomplished by shrinking physical dimensions. Physical gate oxides with physical thicknesses in the range of 1.6 nm are currently fabricated and thicknesses below 1.0 nm will be requested for future device generations [1]. In this thickness range, key dielectric parameters degrade, like gate leakage current, channel mobility, reliability etc. [2,3,4]. Thus, the necessity arises to replace the SiO 2 with a dielectric of higher permittivity [5,6]. Application of oxides with a higher dielectric constant (high-k) allows for a physically thicker insulating layer with the same capacitance per unit area as that required for SiO 2 . The so-called equivalent oxide thickness (EOT) is defined as follows: EOT = d high-k · k SiO2 / k high-k .(1) d high-k is the physical oxide thickness, k SiO2 and k high-k are the dielectric constant of the silicon dioxide and the high-k oxide, respectively. But, the high-k dielectric has to satisfy several requirements to fulfil all the demands of state-of-the-art gate dielectrics. First, it has to be thermodynamically stable in contact with silicon [7], it must be process compatible with CMOS (complementary MOS) and withstand source/drain implant annealing, oxygen diffusion should be low to prevent generation of a sizeable SiO 2 interface layer (IL) or trapping defects [8], and it must have sufficiently high band offsets to act as barrier for electrons and holes [9]. Also, the high-k oxide has to show a high quality interface to silicon, with only few interface or defect states within the silicon band gap, be- Online: 2008-03-24 ISSN: 1662-9752, Vols. 573-574, pp 165-180 doi:10.4028/www.scientific.net/MSF.573-574.165 © 2008 This is an open access article under the CC-BY 4.0 license (https://creativecomm...

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High-density MIM capacitors using Al₂O₃ and AlTiO_x dielectrics

Cited by 163 publications

References 5 publications

Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance

Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance

Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications

High-K: Latest Developments and Perspectives

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