Articles you may be interested inEffects of anisotropic elasticity on stress concentration in micro mechanical structures fabricated on (001) singlecrystal silicon films

Abstract:We report Stark shift measurements for 121 Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28 Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman gfactor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.

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We demonstrate a bottom-up/top-down combined method for the fabrication of horizontally suspended, well-oriented and size-controlled Si nanowire arrays. Mechanical beamlike structures composed of multiple ordered arrays consecutively linked by transversal microspacers are obtained by this method. Such structures are used to investigate the mechanical elasticity of the nanowire arrays by atomic force microscopy. Our results point out important differences in the morphology and mechanical behavior of the fabricated nanowire-based structures with respect to equivalent bulk material structures.