Abstract:We report Stark shift measurements for 121 Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28 Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman gfactor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.
Electrons floating on the surface of liquid helium are possible spin-qubits for quantum information processing. Varying electric potentials are not expected to modify spin states, which allows their transport on helium using a charge-coupled device (CCD)-like array of underlying gates. This approach depends upon efficient inter-gate transfer of individual electrons. Measurements are presented here of the charge transfer efficiency (CTE) of few electrons clocked back and forth above a short microscopic CCD-like structure. A charge transfer efficiency of 0.99999992 is obtained for a clocking frequency of 800 kHz. 73.25.+i, 73.90.+f, 67.90.+z, 03.67.Lx
Abstract:We report Stark shift measurements for 121 Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28 Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman gfactor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.
Electrons on the surface of liquid helium are a widely studied system that may also provide a promising method to implement a quantum computer. One experimental challenge in these studies is to generate electrons on the helium surface in a reliable manner without heating the cryo-system. An electron source relying on photoemission from a zinc film has been previously described using a high power continuous light source that heated the low temperature system. This work has been reproduced more compactly by using a low power pulsed lamp that avoids any heating. About 5 × 10 3 electrons are collected on 1 cm 2 of helium surface for every pulse of light. A time-resolved experiment suggests that electrons are either emitted over or tunnel through the 1 eV barrier formed by the thin superfluid helium film on the zinc surface. No evidence of trapping or bubble formation is seen. PACS numbers: 07.77.-n; 73.20.-r; 03.67.Lx 1 arXiv:1006.4335v1 [cond-mat.other]
Electrons floating on the surface of liquid helium are possible qubits for quantum information processing. Varying electric potentials do not modify spin states, which allows their transport on helium using a charge-coupled device (CCD)-like array of underlying gates. This scheme depends upon efficient inter-gate electron transfer and on the absence of electron traps. We will present a measurement of the charge transfer efficiency (CTE) of electrons clocked back and forth above a short CCD-like structure.The CTE obtained at low clocking frequencies is 0.999 with an electron density of about 4 electrons/ m 2 . We find no evidence for deep electron trapping.Electrons floating on the surface of superfluid helium are potential candidates as qubits for quantum computation 1,2 relying either on their charge states 3,4,5 or spin states 6 as two-level quantum systems. In the case of spin qubits, the electrons would be moved about the surface of the helium using a charge coupled device (CCD)-like network of underlying gates, making this scheme intrinsically scalable. A well-known concern for silicon CCD's is their charge transfer efficiency (CTE) due to charge trapping at the Si/SiO 2 interface or in bulk traps 7 . Whereas leaving a few electrons behind on the clocking path is tolerable in silicon CCD's due to the large number of electrons involved, it becomes unacceptable for quantum computing where single electrons reside on each gate 8 and conserving the electrons is critical.
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