Evaluating the continuous-wave performance of AlGaInP-based red (667 nm) vertical-cavity surface-emitting lasers using low-temperature and high-pressure techniques Appl. Phys. Lett. 78, 865 (2001); 10.1063/1.1342049 6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers Appl.
The fundamental mechanisms of electroluminescence (EL) refrigeration in heterostructure light emitting diodes, is examined via carrier energy loss (and gain) during transport, relaxation, and recombination, where the contribution of electrons and holes are treated separately. This analysis shows that the EL refrigeration process is a combination of thermoelectric cooling that mainly occurs near the metal/semiconductor contacts and radiative recombination which mainly occurs in the active region. In semiconductors such as GaAs, electrons and holes make different contributions to the refrigeration processes as a result of their different densities of states.
Nitrogen incorporation and optical studies of Ga As Sb N ∕ Ga As single quantum well heterostructures J. Appl. Phys. 102, 053106 (2007) GaAsSb/ GaAs quantum wells ͑QWs͒ with 1.3 m light emission are grown using solid-source molecular beam epitaxy. The growth temperature is optimized based on photoluminescence ͑PL͒ linewidth and intensity and edge-emitting laser ͑EEL͒ threshold current density; these measurements concur that the optimal growth temperature is ϳ490°C ͑ϳ500°C͒ for GaAsSb/ GaAs QWs grown with ͑without͒ GaAsP strain compensation. High performance EELs and vertical-cavity surface-emitting lasers ͑VCSELs͒ are demonstrated using the GaAsSb/ GaAs/ GaAsP strain compensated active region. One EEL achieved an output power up to 0.9 W with thresholds as low as 356 A / cm 2 under room temperature pulsed operation, while another achieved continuous-wave ͑cw͒ operation at temperatures up to 48°C for wavelengths as long as 1260 nm. A set of VCSELs achieved room temperature cw operation with output powers from 0.03 to 0.2 mW and lasing wavelengths from 1240 to 1290 nm. The temperature characteristics of these devices indicate that the optimal gain-peak cavity-mode tuning for pulsed operation specifies a room temperature PL peak redshift of 20-30 nm relative to the cavity mode.
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