Impact of electronic density of states on electroluminescence refrigeration

Yu, Shui-Qing; Wang, J. B.; Ding, D.; Johnson, Shane; Vasileska, Dragica; Zhang, Yong-Hang

doi:10.1016/j.sse.2007.06.015

Cited by 12 publications

(9 citation statements)

References 10 publications

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“…This refrigeration technique has several unique advantages over other solidstate cooling approaches like conventional thermoelectric refrigerators, such as higher efficiencies, easier integration with other optoelectronic devices, and broader operation temperature. In the past few decades, there have been some models proposed to simulate and predict the potential of biased semiconductors in electroluminescence refrigeration [3][4][5][6][7][8][9][10]. Dousmanis et al predicted that the electroluminescent cooling is achievable if the quantum efficiency of forward-biased GaAs didoes is higher than 97% [2].…”

Section: Introductionmentioning

confidence: 99%

“…Berdahal [4] discussed the refrigeration effect from a biased junction to an external object of different temperatures considering only radiative recombination and assuming the extraction efficiency to be unity. Later, several groups made some improvements by including nonradiative recombination processes [3,[5][6][7][8][9][10][11]. However, few of them consider the contributions of low-frequency phonon modes or intraband transitions, which inexorably always lead to a flux flowing from the hot side to the cold side and thus offset the refrigeration effect.…”

Section: Introductionmentioning

confidence: 99%

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High-performance electroluminescent refrigeration enabled by photon tunneling

Liu

Zhang

2016

Nano Energy

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Electroluminescent refrigeration, though theoretically proposed half a century ago, is rarely reported due to the requirement of extremely low nonidealities. Here, we theoretically show that by operating the device in the near-field regime with a vacuum gap down to 10 nm, photon tunneling through evanescent waves can increase the tolerance of non-intrinsic nonradiative recombination to 31.6%. More importantly, the refrigeration rate may be enhanced by 2000-fold over the far-field scenario. In addition, the lowest achievable cooling temperature against the ambient condition of 300 K extends from 284.2 K to 270.6 K. A self-consisted model based on the fluctuationdissipation theory combined with dyadic Green's function method is developed considering the effect of the chemical potential of photons on the energy of Planck's quantum oscillators. This work opens a route to greatly enhance electroluminescent refrigeration, while relieving the strict material's requirement, for solid-state noncontact thermal management.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-performance electroluminescent refrigeration enabled by photon tunneling

Liu

Zhang

2016

Nano Energy

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“…Apart from the work of the author and his direct collaborators, two recent experimental e↵orts have been documented, one at Arizona State University and the other at Aalto University in Finland. In parallel with basic theoretical work on the role of heterostructures [14] and low-dimensional systems [15] in the phenomenon, the group at Arizona State fabricated a microstructure [16,17] designed to produce a 6 C drop due to electro-luminescent cooling. Although the group's publications indicate that a substantial experimental e↵ort was made to realize cooling, net cooling has not been reported as of yet.…”

Section: Introductionmentioning

confidence: 99%

Electro-luminescent cooling in the deep sub-bandgap bias regime

Santhanam

2014

SPIE Proceedings

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Recent work on electro-luminescent cooling has focused either on diodes at forward bias voltages just below the bandgap energy, where high cooling power density is possible, or voltages below the thermal voltage, where the e↵ect is more tolerant to parasitic non-radiative recombination. Here we consider the possibilities for diodes designed to operate at intermediate voltages. Numerical calculations suggest that design for this regime may enable near-and mid-infrared devices capable of solid-state refrigeration with su cient power density for some applications.

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“…10 Several theoretical studies have been carried out to investigate the cooling feasibility and capability of semiconductor electroluminescent (EL) refrigeration. [10][11][12][13][14] Mal'shukov and Chao studied the influence of the Auger recombination on the cooling capability of a GaAs embedded double heterostructure (DH). 11 They showed that a net cooling power density of several W/cm 2 is achievable, even if the Auger recombination coefficient is as high as 4 Â 10 À29 cm 6 /s.…”

Section: Introductionmentioning

confidence: 99%

Photon recycling effect on electroluminescent refrigeration

Lee

Yen

2012

Journal of Applied Physics

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We study electroluminescent refrigeration in an AlGaAs/GaAs double heterostructure by a self-consistent calculation with photon recycling considered. To gain insight, we investigate the influence of the recycling on the carrier density and the current components due to various recombination mechanisms in the device under different bias voltages. The photon recycling is a feedback process, which behaves as an internal source of generating electron-hole pairs in the active region and causes an effective feedback current to compensate the driving current from the external source. Consequently, it reduces the driving current, improves the external quantum efficiency, and loosens the requirement on the photon extraction efficiency for refrigeration. For the device with a 1 lm GaAs active layer operating at 300 K, the minimum required extraction efficiency is less than 20% if the trapped photons are completely recycled and remains a feasible value of 45% if the recycling efficiency is 90%, which is not difficult to achieve. In addition, photon recycling eases the problem of the drastic deterioration of the cooling power and the external efficiency as the extraction efficiency reduces. These results reveal a good possibility of realizing electroluminescent refrigeration in semiconductors. V

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Impact of electronic density of states on electroluminescence refrigeration

Cited by 12 publications

References 10 publications

High-performance electroluminescent refrigeration enabled by photon tunneling

High-performance electroluminescent refrigeration enabled by photon tunneling

Electro-luminescent cooling in the deep sub-bandgap bias regime

Photon recycling effect on electroluminescent refrigeration

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