Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 μm VCSEL applications

Blume, G.; Hosea, T. J. C.; Sweeney, S. J.; Johnson, Shane; Wang, J. B.; Zhang, Yong-Hang

doi:10.1049/ip-opt:20055024

Cited by 14 publications

(10 citation statements)

References 24 publications

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“…19 In the comparison of the temperature dependence of the edge electroluminescence and the reflectivity (and thus the cavity mode), the alignment is found to occur at approximately 280(610) K. Further evidence for this comes from measuring the derivative of the reflectivity in temperature dependent electroreflectance measurements. 20 With this method, an alignment of the cavity mode and the QW electroluminescence have been found at 260(610) K. These data, therefore, suggest that the alignment occurs in the temperature range 260-280 K.…”

mentioning

confidence: 69%

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers

Hild

Marko

Johnson

et al. 2011

Applied Physics Letters

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In this letter, we measure the pure spontaneous emission and lasing emission from a working vertical cavity surface emitting laser (VCSEL) for a wide range of temperatures. From this spontaneous emission, we gain insight into the temperature dependence of the radiative component of the threshold current (and hence gain). Together with the temperature dependence of the threshold current, the cavity mode to gain peak alignment and the temperature dependence of an equivalent active region edge emitting laser, we show how non-radiative recombination coupled with gain-cavity de-tuning influences the thermal properties of these devices.

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confidence: 69%

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers

Hild

Marko

Johnson

et al. 2011

Applied Physics Letters

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“…The analysis of the photoluminescence ͑PL͒ peaks as a function of spacer thickness indicated a weak type-I band alignment, 12 whereas a second investigation studying the excitation intensity dependent shift of the PL peak positions at low temperature inferred the interface to be weakly type II. 13 There are several other publications supporting either type I ͑Refs. 14 and 15͒ or type II ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Microscopic electroabsorption line shape analysis for Ga(AsSb)∕GaAs heterostructures

Bückers

Blume

Thränhardt

et al. 2007

Journal of Applied Physics

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A series of Ga͑AsSb͒ / GaAs/ ͑AlGa͒As samples with varying GaAs spacer width are studied by electric-field modulated absorption ͑EA͒ and reflectance spectroscopy and modeled using a microscopic theory. The analysis of the Franz-Keldysh oscillations of GaAs capping layer and of the quantum-confined Stark shift of the lowest quantum well ͑QW͒ transitions shows the strong inhomogeneity of the built-in electric field indicating that the field modulation due to an external bias voltage differs significantly for the various regions of the structures. The calculations demonstrate that the line shape of the EA spectra of these samples is extremely sensitive to the value of the small conduction band offset between GaAs and Ga͑AsSb͒ as well as to the magnitude of the internal electric field changes caused by the external voltage modulation in the QW region. The EA spectra of the entire series of samples are modeled by the microscopic theory. The good agreement between experiment and theory allows us to extract the strength of the modulation of the built-in electric field in the QW region and to show that the band alignment between GaAs and Ga͑AsSb͒ is of type II with a conduction band offset of approximately 40 meV.

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“…Furthermore, the fabrication of GaAs based 1.3 μm VCSELs can take full advantage of the industrial standard 850 nm VCSEL fabrication technology, which is attractive from a manufacturing point of view. Lasers (edge emitting [5] and VCSELs [6]) based upon this material have been an active research area due to their high potential for 1.3 μm active regions on a GaAs substrate [7]- [10]. However difficulty in growing high-quality GaAs 1-x Sb x /GaAs QW active material for 1.3Pm operation is one of the main challenges to make this material system commercially viable [11] [12].…”

Section: Introductionmentioning

confidence: 99%

Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers

Hossain

Hild

Jin

et al. 2010

2010 Photonics Global Conference

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Abstract-We investigate the temperature and pressure dependence of carrier recombination processes occurring in various GaAsSb/GaAs QW laser structures grown under similar growth conditions. Thermally activated carrier leakage via defects is found to be very sensitive to the strain induced interface imperfections. Nonradiative recombination is found to be sensitive to the number of QWs. A strain compensated MQW structure leads to a reduced contribution of nonradiative recombination to the threshold current density (J th ) and a high characteristic temperature (T 0 ) of 73K at room temperature.

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Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 μm VCSEL applications

Cited by 14 publications

References 24 publications

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 μm GaAsSb/GaAs vertical cavity surface emitting lasers

Microscopic electroabsorption line shape analysis for Ga(AsSb)∕GaAs heterostructures

Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers

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