Nonvolatile and reversible resistance switching of copper doped MoOx film was studied. Hysteretic-type resistive switching was observed under dc. Reproducible resistance switching over 106cycles was observed under alternative voltage pulses. Two resistance states can be maintained for 25h at 85°C. The authors proved that resistance switching might be strongly related with the rupture and generation of multifilaments confirmed by spreading resistance images of a conducting atomic force microscope as well as filamentary conduction by double logarithmic plots. Based on the x-ray photoelectron spectroscopy analysis, local conducting filaments could be formed by thermally diffused copper into MoOx film from the bottom electrode.
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