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The cadmium sulfide (CdS) nanopowders have been prepared by ball-milling method, and CdS-polyvinyl alcohol (PVA) nanocompound in the form of film has been deposited on a p-Si wafer as an interfacial layer by spin-coating method. The impedance characteristics of the fabricated Al/CdS-PVA/ p-Si (metal-polymer-semiconductor)-type structures were studied in the frequency and voltage range of 5 kHz-5 MHz and ±1 V, respectively, by considering interface states ( D it ), series resistance (R s ), and interfacial layer effects at 300 K. While the voltage and frequency dependence profiles of D it were evaluated from the low-high frequency capacitance (C LF -C HF ) and Hill-Coleman methods, R s profiles were evaluated from the Nicollian and Brews method. Doping concentration atoms (N A ) and barrier height [ B (capacitance-voltage (C-V ))] values were also obtained from the reverse bias C −2 versus V plots for each frequency. While D it and R s values decrease with increasing frequency almost exponentially, B (C-V ) increases linearly. Therefore, both the measured capacitance (C m ) and conductance (G m /ω) values were corrected to eliminate the R s effect. The experimental results show that R s value is more effective on the impedance measurements at high frequencies in the accumulation region, but D it is effective at low frequencies in the depletion region.Index Terms-Al/cadmium sulfide (CdS)-polyvinyl alcohol (PVA)/p-Si [metal-polymer-semiconductor (MPS)]-type structures, electrical characteristics, impedance measurements, interface traps ( D it ) or surface states (N ss ), series resistance.

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