Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

“…A * value obtained from the temperature dependence of the I − V characteristics may be affected by the lateral inhomogeneity of the barrier, and the fact that it is different from the theoretical value may be connected to a value of the real effective mass that is different from the calculated one. Therefore, these undesirable findings clearly indicate the deviation from pure TE current mechanism and hence further investigations are required to understand the observed behavior [15,61,[71][72][73]77,96,153,[180][181][182].…”

“…The current transport mechanism across MS contact depends on the ideality of the fabricated MS junction, and it is determined from the electrical measurements with sample temperature. To fully understand the electrical properties and behavior of a SBD , the experimental electrical measurements must be taken at different sample temperatures and the characteristic diode parameters must be evaluated from these measurements [15][16][17][18][19][20][21].…”

“…Eglash et al [31] have mentioned the importance of thebarrier height (BH) modification in engineered SBDs. They have reported that the reduced barrier diodes also allow as small signal zero-bias SBDs and microwave mixers, and that in one microwave SBD applications, that the traditional diodes having larger BHs must be used with a dc offset voltage, and furthermore, that the raised barrier structures can be used in the gates of MESFETs, and will result in raised noise margins, and that the small SBH normally causes very large gate leakage currents [15,[32][33][34][35]. Moreover, as mentioned above, the raised barrier devices and diodes are also useful in surface recombination studies and may also be useful as optical detectors such as solar cells and photodiodes.…”

“…However, a detailed definition of the conduction mechanism of a diode is still a difficult problem. The investigation of the I − V data of a MS diode by means of the conventional TE current generally reveals an abnormal reducion in the BH Φ b and an increment in the ideality factor n towards low temperatures [15,34,[86][87][88][89][90][91][92][93][94][95] which causes nonlinearity in the arrhenius activation energy plot ln…”

The origin of constant phase element in equivalent circuit of MIS (n) GaAs structures

“…It is well known that the high density of interface states prevent for a long time a fabrication of field effect devices based on III-V semiconductor compounds in 90s. However, since the beginning of the twenty-first century, renewed interest in such devices has been observed [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. It is associated with the development of new passivation technologies, the construction of new metal-insulator-semiconductor field effect transistors (MISFET), and a number of issues related to silicon device scaling [16][17][18].…”