The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

“…The value of RR for the MPS diode was also found significantly higher than the MS diode. In recent years, similar results have been reported by various studies [31][32][33][34][35][36][37][38][39][40].…”

Frequency and Voltage-dependent Electrical Parameters, Interface Traps, and Series Resistance Profile of Au/(NiS:PVP)/n-Si Structures 

“…Therefore, the quality of electronic devices by an organic interface layer is dependent on different parameters like the interface/surface states (Nss), surface-morphology/preparation, the thickness and permittivity of the interlayer, series-resistance (Rs), the doping level of acceptor/donor-atoms (Na/Nd) and their uniformity, frequency, voltage, and temperature [1][2][3][4][5][6][7][8][9]. When an oxide interlayer for example semiconductor insulator, metal, organic material, and ferroelectric performed between metal and semiconductor interface, MS structure turns into MIS, MPS, and MFS type structure and then gains capacitor features which can store electronic charges or energy [10][11][12][13]. Many Nss or dislocations may be occurred in the fabrication process of the electronic devices due to energy localization in the bandgap of the semiconductor and interface layer.…”

“…Polyvinyl-pyrrolidone/alcohol (PVP, PVA) is semi-crystalline and it has a wide range of crystallinity and some advantages are high water/alcohol-solubility and easy formation of hydrogen bonding, and special dielectric properties [17,18]. For this respect, both PVP and PVA are more important and so they can be used as an organic interlayer in the construction of metal-polymer-semiconductor (MPS) electronic devise [9,11,14,15,[19][20][21][22][23][24][25]. Although polymers have low mobility and permittivity, they can be increased by doped with some materials such as Ni, Co, graphene, Zn, ZnO, CdS, Fe3O4 [14][15][16][17][18][19][20][21]26,27].…”

“…The charges at traps/states can easily follow the alternating ac signal and hence may be produced an excess capacitance/conductance (Cex/Gex) to the real value of them by depending on their life/relaxation-time ( of them and the frequency or period of the measured C and G values [4,[7][8][9][10][11][12][13].…”

Composition analysis of two different PEDOT:PSS commercial products used as an interface layer in Au/n-Si Schottky diode

“…However several research groups are working on different conducting polymers as an interface layer to improve their device performance. 12,13,14 Attempts have so far to enhance the rectication properties of Au/PEDOT:PSS/n-Si Schottky device by induce a stronger inversion layer or to nicely passivate the silicon surface is a recent challenge to the researcher. Therefore changing the chemical composition, morphology and conductivity of PEDOT:PSS thin lm will possible to improve the performance the devices.…”