Preliminary investigations have shown that a family of chalcogenides may be deposited in technologically useful thin film form by an inexpensive technique of spin deposition from solution. The materials which are amorphous and microstructure free retain many of the properties of the solute (e.g., As2S3, As2S2, As2Se3, As2Te3, or GeSe) from which they are prepared. Some of the materials have been demonstrated to be potentially useful for high resolution pattern replication in particular for microlithography.
The annealing behavior of spin coated thin films prepared from solutions of As2S3 dissolved in n-propylamine and n-butylamine has been investigated using IR, mass spectrometry, thermogravimetric analysis, and scanning calorimetry. As prepared films containing arsenic sulfide glass domains with surfaces reacted as alkyl ammonium salt undergo loss of amine and hydrogen sulfide during heating. H2S removal is believed to be accompanied by cross linking of glass domains resulting in a network glass containing only arsenic and sulfur.
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