We report the inhibition of a human recombinant geranylgeranyl diphosphate synthase (GGPPSase) by 23 bisphosphonates and six azaprenyl diphosphates. The IC50 values range from 140 nM to 690 microM. None of the nitrogen-containing bisphosphonates that inhibit farnesyl diphosphate synthase were effective in inhibiting the GGPPSase enzyme. Using three-dimensional quantitative structure-activity relationship/comparative molecular field analysis (CoMFA) methods, we find a good correlation between experimental and predicted activity: R2 = 0.938, R(cv)2 = 0.900, R(bs)2 = 0.938, and F-test = 86.8. To test the predictive utility of the CoMFA approach, we used three training sets of 25 compounds each to generate models to predict three test sets of three compounds. The rms pIC50 error for the nine predictions was 0.39. We also investigated the pharmacophore of these GGPPSase inhibitors using the Catalyst method. The results demonstrated that Catalyst predicted the pIC50 values for the nine test set compounds with an rms error of 0.28 (R2 between experimental and predicted activity of 0.948).

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We have studied structural and electrical properties of one dimensionally grown single crystalline gallium nitride (GaN) nanowires (NWs) for nanoscale devices using a metal-initiated metal-organic chemical vapor deposition (MOCVD). GaN nanowires were formed via the vapor-liquid-solid (VLS) mechanism with gold, iron, or nickel as growth initiators and were found to have triangular cross-sections with widths of 15 ∼ 200 nm and lengths of 5 ∼ 20 µm. TEM confirmed that the nanowires were single crystalline and were well oriented along the [210] or [110] direction on substrate depending on the metal initiators. For electrical transport properties of un-doped GaN nanowires, the back-gated field effect transistors (FET) were also fabricated by standard e-beam lithography. In our electrical measurement, the carrier concentration and mobility were ≈ 2 ∼ 4 × 10 18 cm -3 and 60 ∼ 70 cm 2 /V s, respectively.

The mechanism of stain formation in the chemical etching reaction of silicon has been investigated in HF–oxidizing agent–H2O solutions. The chemical formula of the stain formed during the silicon etching reaction is K2SiF6. The concentration of holes on silicon surface increases with the increase of redox potential and the concentration of oxidizing agent used in manufacturing the etching solution. The increase in the hole concentration accelerates not only the etch rate but also the formation rate of K2SiF6. The etched silicon surfaces are covered with a K2SiF6 layer when redox potential and concentration of oxidizing agent are great at low HF concentrations. This happens because the formation rate of K2SiF6 is much greater than its dissolution rate by HF. Sufficiently high HF concentration in the etching solution is apparently essential to increase the etch rate without the formation of K2SiF6.

We studied the effects of the growth rate of a GaN buffer layer grown on a GaN epilayer. It was found that this growth rate plays a key role in improving the quality of the GaN film on a sapphire substrate and an optimum growth rate exists that yields the best crystal quality. A GaN film grown on a buffer layer with the optimum growth rate of 18.3 nm/min has an electron Hall mobility of 539 cm2/V s and a dislocation density of approximately 2×108 cm−2. These improvements of GaN film qualities are illustrated by the promotion of the lateral growth mode.

Calculations have been made using the Fletcher and Butcher method in a three conduction band model to fit a wide range of experimental transport data for n-type samples of GaSb: viz. Hall coefficient and electrical conductivity as a function of temperature and as a function of pressure at room temperature, magnetoresistance as a function of magnetic field at different temperatures, and Nernst–Ettingshausen coefficients as a function of magnetic field. Various energy gap parameters and scattering coefficients have been taken as adjustable and values determined for these which give good fits to all of the experimental data. Values of mobility for each of the Γ, L, and X bands have then been calculated as a function of temperature.

The physical properties of rubber compounds are mainly determined by the filler dispersion within the rubber matrix, filler–rubber interaction, and chemical crosslink structure caused by sulfur. Carbon black or silica is typically used as a reinforcing filler in tire tread compounds; however, binary filler systems comprising the two types of filler are also currently being used to complement each other. This study used binary filler systems to manufacture vulcanizates and classified the vulcanizate structures as chemical crosslinks caused by sulfur, physical crosslinks caused by carbon black (carbon black–bound rubber), and silica–silane–rubber networks caused by silica and silane. The effect of each vulcanizate structure on the physical properties was also calculated. In the proposed binary filler system, silica chemically bonds with rubber molecules, unlike carbon black. Therefore, the crosslink density per unit of silica content was 19% higher than that of carbon black, in which rubber molecules were physically adsorbed on the surface. Tensile properties affected by 1 unit of crosslinking density for each filler were calculated, and silica was found to contribute more in the low-elongation range, whereas carbon black contributed more in the high-elongation range. Regarding tan δ at 60 °C and abrasion resistance per unit crosslink density of filler, carbon black made a greater contribution than silica, whereas silica had a greater contribution to wet traction and snow traction.

Purpose: As human papillomavirus (HPV) is primarily responsible for the development of cervical cancer, significant efforts have been devoted to develop novel strategies for detecting and identifying HPV DNA in urine. The analysis of target DNA sequences in urine offers a potential alternative to conventional methods as a non-invasive clinical screening and diagnostic assessment tool for the detection of HPV. However, the lack of efficient approaches to isolate and directly detect HPV DNA in urine has restricted its potential clinical use. In this study, we demonstrated a novel approach of using polyethylenimine-conjugated magnetic polypyrrole nanowires (PEI-mPpy NWs) for the extraction, identification, and PCR-free colorimetric detection of high-risk strains of HPV DNA sequences, particularly HPV-16 and HPV-18, in urine specimens of cervical cancer patients. Materials and Methods: We fabricated and characterized polyethylenimine-conjugated magnetic nanowires (PEI/mPpy NWs). PEI/mPpy NWs-based HPV DNA isolation and detection strategy appears to be a cost-effective and practical technology with greater sensitivity and accuracy than other urine-based methods. Results: The analytical and clinical performance of PEI-mPpy NWs was evaluated and compared with those of cervical swabs, demonstrating a superior type-specific concordance rate of 100% between urine and cervical swabs, even when using a small volume of urine (300 µL). Conclusion: We envision that PEI-mPpy NWs provide substantive evidence for clinical diagnosis and management of HPV-associated disease with their excellent performance in the recovery and detection of HPV DNA from minimal amounts of urine samples.