Gallium nitride nanowires with a metal initiated metal‐organic chemical vapor deposition (MOCVD) approach

Lee, Sang Kwon; Choi, Heon Jin; Pauzauskie, Peter J.; Yang, Peidong; Cho, Nam Kyu; Park, Hyo Derk; Suh, Eun Kyung; Lim, Kee Young; Lee, Hyung Jae

doi:10.1002/pssb.200404989

Cited by 69 publications

(34 citation statements)

References 8 publications

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“…Nanocolumnar structures, either with Si [14], III-V [12,13], II-VI [7,8,33] or group-III nitrides [15], grown with catalysts on the substrate as nucleation sites to promote the nanocolumnar growth, follow the VLS mechanism [14]. However, none of the (In,Ga)N or (Al,Ga)N nanocolumns grown by our group (this work and references) used surfactants or catalysts.…”

Section: Growth Mechanisms Of Group-iii-nitride Nanocolumnsmentioning

confidence: 95%

“…Metal particles (In, Ni, Au) deposited on the substrate surface usually work as catalysts to grow III-V nanocolumns by MOCVD. Also group-III-nitride nanocolumns grown by MOCVD using catalysts [15] seem to follow a VLS mechanism. However, for group-III-nitride nanocolumns grown by MBE without any catalyst and under excess nitrogen [1][2][3][4][5], little is known about the growth mechanisms engaged in their formation.…”

Section: Introductionmentioning

confidence: 98%

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Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks

Calleja¹,

Ristić

Fernández-Garrido

et al. 2007

Physica Status Solidi (b)

155

157

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The growth conditions to achieve group-III-nitride nanocolumns and nanocolumnar heterostructures by plasma-assisted molecular beam epitaxy are studied. The evolution of the nanocolumnar morphology with the growth conditions is determined for (Ga,Al)N and (In,Ga)N nanocolumns. The mechanisms behind the nanocolumnar growth under high N-rich conditions are clarified in the sense that no seeding or catalysts are required, as it is the case in the vapour-liquid-solid model that applies to most nanocolumns grown by metal organic chemical vapour deposition, either with group-III nitrides, II -VI or III -V compounds. Some examples of nanocolumnar heterostructures are given, like quantum disks and cylindrical nanocavities. Preliminary results on the growth of arrays of ordered GaN nanocolumns are reported.

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Section: Growth Mechanisms Of Group-iii-nitride Nanocolumnsmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 98%

Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks

Calleja¹,

Ristić

Fernández-Garrido

et al. 2007

Physica Status Solidi (b)

155

157

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“…In most cases nanocolumns are defect free, which allows fabrication of efficient light emitting devices [3][4][5]. However, most commonly the nanorod growth is metal initiated [6,7], or the structures are grown after a preceding surface structuring, e.g. patterning or masking processes [8,9].…”

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confidence: 99%

Catalyst free self‐organized grown high‐quality GaN nanorods

Aschenbrenner

Kunert

Freund

et al. 2011

Physica Status Solidi (b)

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Highly ordered GaN nanorods were grown self-organized and without catalyst on r-plane sapphire by molecular beam epitaxy while the AlN nucleation sites for the nanorods were provided by a nitridation process using a metal-organic vapor-phase epitaxy system. The growth window for the nanorod formation was analysed in detail and turned out to be very sensitive with respect to the growth temperature. The nanorods are symmetrically tilted with an inclination angle of 628 between the substrate and the nanorods. The mirror axis is the c-direction of the compact GaN layer surrounding the roots of the nanocolumns. Methods for the control of the nanorod density and the suppression of one nanorod growth direction are presented. The results indicate a diffusion based growth mechanism. Transmission electron microscopy studies and high resolution X-ray diffraction (HRXRD) polar plots reveal the epitaxial relationship between substrate, compact GaN layer and nanorods. The nanorods grow in c-direction and the side facets are m-planes. Transmission electron microscopic and optical analysis of the nanorods reveal the good structural and optical properties, respectively. A full width at half maximum (FWHM) of 1.2 meV of the donor-bound exciton emission was measured for both the ensemble and single free-standing nanorods. Successful n-and Mg-doping of nanorods was verified by a strong increase of the micro-photoluminescence intensity of the respective donor-bound and acceptor-bound exciton emission peak in comparison to an undoped sample.The background shows a secondary electron microscope image (angle of 108 between sample surface and electron beam) of the nanorods. Superimposed to the SEM image, a typical microphotoluminescence spectrum of the excitonic emission of an ensemble at 25 K is presented. The donor-bound, acceptorbound and free exciton lines are labelled with D 0 X, A 0 X and FX, respectively.

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“…[1] have informed us that major results from this article have already been presented in the Letter "Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections" by T. Kuykendall et al, published in Nano Lett. 3, No.…”

mentioning

confidence: 70%

“…Reference [1] has been published as part of the Proceedings of the 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004). The Editors of physica status solidi note that if the above mentioned circumstances had been known to them earlier, this article might still have qualified for publication as a conference paper, but not as an Original Paper in physica status solidi (b).…”

mentioning

confidence: 99%