Laser-wakefield acceleration offers the promise of a compact electron accelerator for generating a multi-GeV electron beam using the huge field gradient induced by an intense laser pulse, compared to conventional rf accelerators. However, the energy and quality of the electron beam from the laser-wakefield accelerator have been limited by the power of the driving laser pulses and interaction properties in the target medium. Recent progress in laser technology has resulted in the realization of a petawatt (PW) femtosecond laser, which offers new capabilities for research on laser-wakefield acceleration. Here, we present a significant increase in laser-driven electron energy to the multi-GeV level by utilizing a 30-fs, 1-PW laser system. In particular, a dual-stage laser-wakefield acceleration scheme (injector and accelerator scheme) was applied to boost electron energies to over 3 GeV with a single PW laser pulse. Three-dimensional particle-in-cell simulations corroborate the multi-GeV electron generation from the dual-stage laser-wakefield accelerator driven by PW laser pulses.

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We fabricated moth-eye structures on photovoltaic (PV) protective glass, a hybrid nano-imprint lithography technique. The efficiency of the PV module with PV protective glass patterned on both sides was enhanced.

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In this study, an oxide-based nano-patterned sapphire substrate (ONPSS) was used as the substrate for a nitride-based light emitting diode (LED) in order to enhance the LED's internal quantum efficiency and light extraction efficiency. The ONPSS was fabricated by a direct spin-on-glass printing technique, which is simple, easy, and relatively low-cost technique. Conventional PSSs are generally fabricated by photolithography and a sapphire etching process. However, the process reported here, it is possible to fabricate an oxide-based PSS without the sapphire etching process. After a GaN-based blue LED device was grown on the ONPSS, we measured the photoluminescence and electroluminescence intensity to confirm the light extraction efficiency and internal quantum efficiency of the LED. Compared to a GaN LED grown on an unpatterned sapphire, the ONPSSbased LED exhibited a 100% increase in light output power without electrical degradation.

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