In this study, an oxide-based nano-patterned sapphire substrate (ONPSS) was used as the substrate for a nitride-based light emitting diode (LED) in order to enhance the LED's internal quantum efficiency and light extraction efficiency. The ONPSS was fabricated by a direct spin-on-glass printing technique, which is simple, easy, and relatively low-cost technique. Conventional PSSs are generally fabricated by photolithography and a sapphire etching process. However, the process reported here, it is possible to fabricate an oxide-based PSS without the sapphire etching process. After a GaN-based blue LED device was grown on the ONPSS, we measured the photoluminescence and electroluminescence intensity to confirm the light extraction efficiency and internal quantum efficiency of the LED. Compared to a GaN LED grown on an unpatterned sapphire, the ONPSSbased LED exhibited a 100% increase in light output power without electrical degradation.
In this study, we fabricated a high-brightness AlGaInP light-emitting diode (LED) using the direct printing technique and dry etching. In general, wet etching is used for surface roughening to improve the light extraction of AlGaInP red LEDs. However, a structure fabricated by wet etching has limited height and shows a tiled cone shape after the etching process due to the AlGaInP crystal structure. These limitations reduce the light extraction of the LED. As a result, we fabricated a perfectly cone-shaped pattern with high aspect ratio using direct printing by etching to maximize the LED light extraction efficiency. Compared to the red LED with a wet-etched structure, the patterning enhanced the light output power by 12% without electrical degradation. This enhanced light output power was maintained even after the packaging process.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.