Surfaceenhanced Raman scattering (SERS) of thiourea [SC(NH,),] was studied in acidic solutions of 0.1 M H,SO, and 0.1 M HCI. Very strong SERS bands of thiourea were observed in the acidic solutions, in contrast to very weak SERS spectra of thiourea in standard SERS solutions employing K,SO, or KCI. Thiourea seems to have a strong and stable surface adsorption at a silver electrode in the acidic solutions where protonation and anionic co-adsorption may enhance this surface stability of thiourea.
The demands on higher bandwidth with reduced power consumption in mobile market are driving mobile DRAM with advanced design techniques. Proposed LPDDR4 in this paper achieves over 39% improvement in power efficiency and over 4.3 Gbps data rate with 1.1 V supply voltage. These are challenging targets compared with those of LPDDR3. This work describes design schemes employed in LPDDR4 to satisfy these requirements, such as multi-channel-per-die architecture, multiple training modes, low-swing interface, DQS and clock frequency dividing, and internal reference for data and command-address signals. This chip was fabricated in a 3-metal 2y-nm DRAM CMOS process.
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