No abstract

No abstract

Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument J.A systematic investigation of the diffusion of Be, B, Na, Mg, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Ni, Zn, Ge, Rb, and Mo in silicon has been carried out. The elements were implanted into silicon wafers as low dose impurities, and then postheat treatments of the ion-implanted samples were conducted at different temperatures for a specific time. Following the anneals, the depth profiles were obtained by secondary ion mass spectrometry analyses. A wide range of diffusion behavior has been observed for these elements. Based on differences in the depth profiles the diffusion mechanism was identified where possible.

Doping material with nanoparticles is increasingly used as an effective method for improving their mechanical, optical, and sturdiness properties in many fields. More specifically, effective material development will depend on our ability to control nanoparticles’ shape, composition, and size. While crystalline nanophase can be examined easily, characterization of amorphous nanoparticles remains a challenge. Here, we investigate the chemical composition of sub-20-nm oxide nanoparticles grown in rare-earth doped silicate glass through the phase separation mechanism occurring under heat treatment. Using a combination of analytical techniques, we demonstrate that nanoparticle composition and, therefore, the chemical environment of encapsulated rare-earth ions, is nanoparticle size dependent. This new experimental evidence of composition change contributes unique insights on the phase separation mechanism that will lead to better comprehension and will guide development of future materials.

Diffusion data are presented for 18 elements implanted in SiO 2 layers thermally grown on silicon and annealed at temperatures ranging from 300 to 1000°C. Most species studied,

Optical materials capable of advanced functionality in the infrared will enable optical designs that can offer lightweight or small footprint solutions in both planar and bulk optical systems. The University of Central Florida's Glass Processing and Characterization Laboratory, together with our collaborators, have been evaluating compositional design and processing protocols for both bulk and film strategies employing multicomponent chalcogenide glasses (ChGs). These materials can be processed with broad compositional flexibility that allows tailoring of their transmission window, physical and optical properties, which allows them to be engineered for compatibility with other homogeneous amorphous or crystalline optical components. We review progress in forming ChG-based gradient refractive index (GRIN) materials from diverse processing methodologies, including solution-derived ChG layers, poled ChGs with gradient compositional and surface reactivity behavior, nanocomposite bulk ChGs and glass ceramics, and metalens structures realized through multiphoton lithography. We discussed current design and metrology tools that lend critical information to material design efforts to realize next-generation IR GRIN media for bulk or film applications.

No abstract

No abstract