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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument J.A systematic investigation of the diffusion of Be, B, Na, Mg, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Ni, Zn, Ge, Rb, and Mo in silicon has been carried out. The elements were implanted into silicon wafers as low dose impurities, and then postheat treatments of the ion-implanted samples were conducted at different temperatures for a specific time. Following the anneals, the depth profiles were obtained by secondary ion mass spectrometry analyses. A wide range of diffusion behavior has been observed for these elements. Based on differences in the depth profiles the diffusion mechanism was identified where possible.

Doping material with nanoparticles is increasingly used as an effective method for improving their mechanical, optical, and sturdiness properties in many fields. More specifically, effective material development will depend on our ability to control nanoparticles’ shape, composition, and size. While crystalline nanophase can be examined easily, characterization of amorphous nanoparticles remains a challenge. Here, we investigate the chemical composition of sub-20-nm oxide nanoparticles grown in rare-earth doped silicate glass through the phase separation mechanism occurring under heat treatment. Using a combination of analytical techniques, we demonstrate that nanoparticle composition and, therefore, the chemical environment of encapsulated rare-earth ions, is nanoparticle size dependent. This new experimental evidence of composition change contributes unique insights on the phase separation mechanism that will lead to better comprehension and will guide development of future materials.