Electronic doping has endowed colloidal quantum wells (CQWs) with unique optical and electronic properties, holding great potential for future optoelectronic device concepts. Unfortunately, how photogenerated hot carriers interact with phonons in these doped CQWs still remains an open question. Here, through investigating the emission properties, we have observed an efficient phonon cascade process (i.e., up to 27 longitudinal optical phonon replicas are revealed in the broad Cu emission band at room temperature) and identified a giant Huang–Rhys factor (S ≈ 12.4, more than 1 order of magnitude larger than reported values of other inorganic semiconductor nanomaterials) in Cu-doped CQWs. We argue that such an ultrastrong electron–phonon coupling in Cu-doped CQWs is due to the dopant-induced lattice distortion and the dopant-enhanced density of states. These findings break the widely accepted consensus that electron–phonon coupling is typically weak in quantum-confined systems, which are crucial for optoelectronic applications of doped electronic nanomaterials.
Due to the untiring efforts of scientists and researchers on oxide semiconductor materials, processes, and devices, the applications for oxide-based thin film transistors (TFTs) have been researched and promoted on a large scale. With the advantages of relatively high carrier mobility, low off-current, good process compatibility, optical transparency, low cost, and especially flexibility, oxide-based TFTs have already been adapted for not only displays (e.g., liquid crystal display (LCD), organic light emitting diode (OLED), micro-light-emitting diode (Micro-LED), virtual reality/augmented reality (VR/AR) and electronic paper displays (EPD)) but also large-area electronics, analog circuits, and digital circuits. Furthermore, as the requirement of TFT technology increases, low temperature poly-silicon and oxide (LTPO) TFTs, which combine p-type LTPS and n-type oxide TFT on the same substrate, have drawn further interest for realizing the hybrid complementary metal oxide semiconductor (CMOS) circuit. This invited review provides the current progress on applications of oxide-based TFTs. Typical device configurations of TFTs are first described. Then, the strategies to apply oxide-based TFTs for improving the display quality with different compensation technologies and obtaining higher performance integrated circuits are highlighted. Finally, an outlook for the future development of oxide-based TFTs is given.
Colloidal quantum wells (CQWs), also known as nanoplatelets (NPLs), are exciting material systems for numerous photonic applications, including lasers and light-emitting diodes (LEDs). Although many successful type-I NPL-LEDs with high device performance have been demonstrated, type-II NPLs are not fully exploited for LED applications, even with alloyed type-II NPLs with enhanced optical properties. Here, we present the development of CdSe/CdTe/CdSe core/crown/crown (multi-crowned) type-II NPLs and systematic investigation of their optical properties, including their comparison with the traditional core/crown counterparts. Unlike traditional type-II NPLs such as CdSe/CdTe, CdTe/CdSe, and CdSe/CdSe x Te1–x core/crown heterostructures, here the proposed advanced heterostructure reaps the benefits of having two type-II transition channels, resulting in a high quantum yield (QY) of 83% and a long fluorescence lifetime of 73.3 ns. These type-II transitions were confirmed experimentally by optical measurements and theoretically using electron and hole wave function modeling. Computational study shows that the multi-crowned NPLs provide a better-distributed hole wave function along the CdTe crown, while the electron wave function is delocalized in the CdSe core and CdSe crown layers. As a proof-of-concept demonstration, NPL-LEDs based on these multi-crowned NPLs were designed and fabricated with a record high external quantum efficiency (EQE) of 7.83% among type-II NPL-LEDs. These findings are expected to induce advanced designs of NPL heterostructures to reach a fascinating level of performance, especially in LEDs and lasers.
Organic light-emitting diodes (OLEDs) are promising for displays and lighting technologies because of their excellent advantages, such as high efficiency, high luminance, low power consumption, light weight, and flexibility. In recent years, ultrathin emitting nanolayers (UENs) have been used to develop OLEDs without the doping technique, which can simplify device structure, reduce material loss, achieve good exciton utilization, and realize comparable performance to doped devices such as the external quantum efficiency of 28.16%, current efficiency of 63.84 cd/A, and power efficiency of 76.70 Lm/W for white OLEDs. In this review, we comprehensively summarize the recent progress in the field of UEN-based OLEDs. Firstly, the host–guest-doped OLEDs and doping-free UEN-based OLEDs are compared. Then, various effective approaches for designing UEN-based OLEDs are presented, including both monochromatic and white devices. In particular, the properties of materials, the design of device structures, and the main working mechanisms of UEN-based OLEDs are highlighted. Finally, an outlook on the future development of UEN-based OLEDs is provided.
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