Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors J. Appl. Phys. 93, 1926(2003; 10.1063/1.1535732Large-grain polycrystalline silicon films with low intragranular defect density by low-temperature solid-phase crystallization without underlying oxide
Sequential lateral solidification (SLS) technology developed for crystallizing amorphous Si enlarges grain size effectively. However, thin-film transistors made by SLS suffer reliability issues possibly due to the innate sub-grain boundaries parallel to the drain current direction as a result of the solidification process. In this study, we report the first-time observed channel-width-dependent degradation on these devices after hot carrier stress. A model was proposed and verified through the simulated sub-circuit characteristics, which successfully explains the degraded transistor behavior and its width dependence.
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