Abstract:Sequential lateral solidification (SLS) technology developed for crystallizing amorphous Si enlarges grain size effectively. However, thin-film transistors made by SLS suffer reliability issues possibly due to the innate sub-grain boundaries parallel to the drain current direction as a result of the solidification process. In this study, we report the first-time observed channel-width-dependent degradation on these devices after hot carrier stress. A model was proposed and verified through the simulated sub-ci… Show more
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