The negative bias temperature instability (NBTI) characteristics of p-channel metal oxide semiconductor field effect transistor (pMOSFET) devices with novel Hf x Mo y N z metal gates have been investigated for the first time. The threshold voltage (V th ) shift, subthreshold swing (SS), off-leakage current, and field effect mobility ( FE ) were found to be degraded after NBTI stress. The possibility of nitrogen diffusing to the oxide is increased by employing a higher N 2 ratio during Hf x Mo y N z deposition. The higher nitrogen content in Hf x Mo y N z metal gates shows threshold voltage (V th ) shift, subthreshold swing (SS), off-leakage current, and field effect mobility ( FE ) degradation. The degradation of threshold voltage (V th ), subthreshold swing (SS), off-leakage current, and field effect mobility ( FE ) are believed to be due to the interface states and fixed oxide charges generation from the broken Si-H bonds at the SiO 2 /Si interface. Furthermore, the mechanism of NBTI degradation has been suggested by a physical model and an energy band diagram.
A Lagrangian from which one can derive the third post-Newtonian (3PN) equations of motion of compact binaries (neglecting the radiation reaction damping) is obtained. The 3PN equations of motion were computed previously by Blanchet and Faye in harmonic coordinates. The Lagrangian depends on the harmonic-coordinate positions, velocities and accelerations of the two bodies. At the 3PN order, the appearance of one undetermined physical parameter λ reflects the incompleteness of the point-mass regularization used when deriving the equations of motion. In addition the Lagrangian involves two unphysical (gauge-dependent) constants r 1 and r 2 parametrizing some logarithmic terms. The expressions of the ten Noetherian conserved quantities, associated with the invariance of the Lagrangian under the Poincaré group, are computed. By performing an infinitesimal 'contact' transformation of the motion, we prove that the 3PN harmonic-coordinate Lagrangian is physically equivalent to the 3PN Arnowitt-Deser-Misner Hamiltonian obtained recently by Damour, Jaranowski and Schäfer.
The effects of self-aligned fluorine-ion implantation on the negative-bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors with HfMoN metal gates and Gd 2 O 3 gate dielectrics were investigated. The threshold voltage V th can be adjusted from −0.8 to −0.02 V by increasing the nitrogen concentration in the HfMoN metal gates. However, this adjustment degrades the NBTI, and consequently, the V th shifts are increased by 140 and 500 mV for samples with low (0%) and high (12%) nitrogen concentration, respectively, in the HfMoN metal gates. This degradation of NBTI was improved by fluorine incorporation.Index Terms-Fluorine, high-k, metal gate, negative-bias temperature instability (NBTI), nitrogen.
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