2010
DOI: 10.1143/jjap.49.04da15
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Threshold Voltage Tunability of p-Channel Metal Oxide Semiconductor Field-Effect Transistor with Ternary HfxMoyNz Metal Gate and Gd2O3 High-k Gate Dielectric

Abstract: A Lagrangian from which one can derive the third post-Newtonian (3PN) equations of motion of compact binaries (neglecting the radiation reaction damping) is obtained. The 3PN equations of motion were computed previously by Blanchet and Faye in harmonic coordinates. The Lagrangian depends on the harmonic-coordinate positions, velocities and accelerations of the two bodies. At the 3PN order, the appearance of one undetermined physical parameter λ reflects the incompleteness of the point-mass regularization used … Show more

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