COMMUNICATION Adv. Mater. 2012, 24, 3065-3069 using an Agilent 4156C semiconductor parameter analyzer. A standard f T measurement setup was used with a high impedance active probe, Picoprobe Model 18C with 20 fF input capacitance by GGB Industries Inc. to minimize coupling.
Printed electronics promises the realization of low-cost electronic systems on flexible substrates over large areas. In order to achieve this, high quality patterns need to be printed at high speeds. Gravure printing is a particularly promising technique that is both scalable and offers micron-scale resolution. Here, we review the tremendous progress that has recently been made to push gravure printing beyond its traditional limitations in the graphic arts. Rolls with far greater precision than traditional rolls and with sub-5 μm resolution can be fabricated utilizing techniques leveraging the precision of silicon microfabrication. Physical understanding of the sub-processes that constitute the gravure process is required to fully utilize the potential of gravure. We review the state-of-the-art of this understanding both for single cells and patterns of multiple cells to print high-resolution features as well as highlyuniform layers. Finally, we review recent progress on gravure printed transistors as an important technology driver. Fully high-speed printed transistors with sub-5 μm channel length and sub-5 V operation can be printed with gravure.
This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and /(on) //(off) of 10(4) ~10(5) .
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