COMMUNICATION Adv. Mater. 2012, 24, 3065-3069 using an Agilent 4156C semiconductor parameter analyzer. A standard f T measurement setup was used with a high impedance active probe, Picoprobe Model 18C with 20 fF input capacitance by GGB Industries Inc. to minimize coupling.

This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and /(on) //(off) of 10(4) ~10(5) .

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Solution-processed mechanically flexible resistive random access memories are fabricated using Ag(2)Se nanoparticles; the fabricated Ag/Ag(2)Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 10(5) s, and no degradation in endurance after 10(4) switching cycles, with stable operation even under a mechanical strain of 0.38%.

Aucore–Agshell triangular bifrustum nanocrystals were synthesized in aqueous solution using a seed-mediated approach. The formation of the Ag layer on the Au nanoprism seeds leads to structures with highly tunable dipole and quadrupole surface plasmon resonances. Discrete dipole approximation calculations show that it is the geometry of these novel structures rather than the addition of a new element that leads to the plasmon tunability. The structure and composition of these novel nanocrystals have been investigated by transmission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and energy-dispersive spectrometry.