The introduction of telemedicine in China, linking highly specialized major hospitals (hub) with hundreds of small rural hospitals (spoke), can greatly improve the quality, efficiency, and cost-effectiveness of healthcare delivery and utilization. This new Internet-based healthcare model should be utilized more widely in developing countries.

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Metal matrix composites reinforced with ceramic particles have become the most attractive material in the research and development of new materials for thermal management applications. In this work, 40–60 vol. % TiCx-TiB2/Al composites were successfully fabricated by the method of combustion synthesis and hot press consolidation in an Al-Ti-B4C system. The effect of the TiCx-TiB2 content on the microstructure and compression properties of the composites was investigated. Moreover, the abrasive wear behavior and thermo-physics properties of the TiCx-TiB2/Al composite were studied and compared with the TiCx/Al composite. The compression properties, abrasive wear behavior and thermo-physics properties of the TiCx-TiB2/Al composite are all better than those of the TiCx/Al composite, which confirms that the TiCx-TiB2/Al composite is more appropriate for application as a heat sink.

Hysteresis in carbon nanotube field-effect transistors (CNTFETs) is an important issue that should be solved in the face of an integration in the complementary metal oxide semiconductor (CMOS) technology. One possible way is the passivation of the devices with poly(methyl methacrylate) (PMMA). In this work, PMMA-passivated CNTFETs are produced with a novel selfaligned fabrication process. The nanotubes are grown in-situ by chemical vapor deposition over the wafer surface so that no complex manipulations are required. The unique step of lithography avoids misalignment. With this suitable fabrication process, more than 6000 passivated transistors have recently been fabricated very easily in our institute. The devices are working like p-type MOSFET with on/off ratios of up to several 10 6 , are fully functional even at ultralow supply voltages (e.g., 400 mV drain voltage, À3 to 3 V gate voltages) and show reduced hysteresis effects (e.g., 580 mV at I ds of 10 À8 A).

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