We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.

Coarse-grained reconfigurable architectures (CGRAs) present an appealing hardware platform by providing the potential for high computation throughput, scalability, low cost, and energy efficiency. CGRAs consist of an array of function units and register files often organized as a two dimensional grid. The most difficult challenge in deploying CGRAs is compiler scheduling technology that can efficiently map software implementations of compute intensive loops onto the array. Traditional schedulers focus on the placement of operations in time and space. With CGRAs, the challenge of placement is compounded by the need to explicitly route operands from producers to consumers. To systematically attack this problem, we take an edge-centric approach to modulo scheduling that focuses on the routing problem as its primary objective. With edge-centric modulo scheduling (EMS), placement is a by-product of the routing process, and the schedule is developed by routing each edge in the dataflow graph. Routing cost metrics provide the scheduler with a global perspective to guide selection. Experiments on a wide variety of compute-intensive loops from the multimedia domain show that EMS improves throughput by 25% over traditional iterative modulo scheduling, and achieves 98% of the throughput of simulated annealing techniques at a fraction of the compilation time.

In thin films of mixed ionic electronic conductors sandwiched by two ion-blocking electrodes, the homogeneous migration of ions and their polarization will modify the electronic carrier distribution across the conductor, thereby enabling homogeneous resistive switching. Here we report non-filamentary memristive switching based on the bulk oxide ion conductivity of amorphous GaO x (xB1.1) thin films. We directly observe reversible enrichment and depletion of oxygen ions at the blocking electrodes responding to the bias polarity by using photoemission and transmission electron microscopies, thus proving that oxygen ion mobility at room temperature causes memristive behaviour. The shape of the hysteresis I-V curves is tunable by the bias history, ranging from narrow counter figure-eight loops to wide hysteresis, triangle loops as found in the mathematically derived memristor model. This dynamical behaviour can be attributed to the coupled ion drift and diffusion motion and the oxygen concentration profile acting as a state function of the memristor.

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Secondary alcohols (carbinols) react with primary alcohols in dioxane at 80 °C in the presence of a catalytic amount of RuCl2(PPh3)3 and KOH along with a sacrificial hydrogen acceptor to afford the corresponding coupled secondary alcohols. The reaction is applicable to a wide range of aryl methyl, alkyl methyl, and cyclic carbinols, and with alkyl methyl carbinols, the alkylation took place exclusively at the less-hindered methyl position over β-methylene and -methine.

For a mixed oxide-ion and electron conducting oxide, with oxygen vacancies (V(O)) and electrons (e') or holes (h ) as charge carriers, a flux of (V(O)) (J(i)) can in principle be driven, not only directly by its own electrochemical potential gradient (inverted Delta eta(i)), but also indirectly by that of electrons (inverted Delta eta(e)), and vice versa for the flux of electrons (J(e)). It is common practice to assume that electrons and mobile ions migrate independently, despite the lack of experimental evidence in support of this. Here, all the Onsager coefficients, including the cross coefficients, have been measured for Ce(0.8)Pr(0.2)O(2-delta) within the a(O(2)) range 10(-21)-1 at 800 degrees C, using local ionic and electronic probes in a four-probe configuration. The cross coefficients of transport were found to be negligible in comparison to the direct coefficients in the a(O(2)) range 10(-21)-10(-4), but of the same order of magnitude as the direct coefficients for high a(O(2)) values (10(-2)-1). This is in contrast to the commonly used assumption that the two types of carriers migrate independently, i.e. that L(ie) = 0.

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La(2)NiO(4+delta) is an oxygen excess compound (delta > 0) with oxygen interstitials (O(i) and holes (h*) in majority, which deviates positively from the ideal-dilute-solution behavior of defects. It was earlier attempted to interpret this positive deviation by taking into account the activity coefficients of both O(i) and h*. In this work, we examined the nonstoichiometry, electrical conductivity, and thermopower against oxygen activity in the entire stability range of the oxide at 800 degrees , 900 degrees and 1000 degrees C, respectively. It has been found that the positive deviation is ascribed essentially to the hole degeneracy and quantitatively described by using the Joyce-Dixon approximation of the Fermi-Dirac integral. Consequently evaluated are the effective density of states of the valence band (20.3