Undoped epitaxial films of α-Ga2O3 were grown on basal plane sapphire substrates by halide vapor phase epitaxy (HVPE) in three different modes: standard HVPE, HVPE with constant flow of Ga and pulsed supply of O2 (O2-control growth regime), and with constant flow of O2 and pulsed delivery of Ga (Ga-control growth fashion). The best crystalline quality as judged by x-ray symmetric and asymmetric reflection half-widths and by atomic force microscopy morphology profiling was obtained with the O2-control deposition, and these results appear to be the best so far reported for α-Ga2O3 films. All grown α-Ga2O3 epilayers were high-resistivity n-type, with the Fermi level pinned near Ec − 1 eV deep traps. Photoinduced current transient spectra also showed the existence in standard HVPE samples and samples grown under the O2-control pulsed growth conditions of deep hole traps with levels near Ev + 1.4 eV whose density was suppressed in the Ga-control pulsed HVPE samples. The levels of the dominant deep traps in these α-Ga2O3 samples are close to the position of dominant electron and hole traps in well documented β-Ga2O3 crystals and films.

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Noble metal-based surface-enhanced Raman spectroscopy (SERS) has enabled the simple and efficient detection of trace-amount molecules via significant electromagnetic enhancements at hot spots. However, the small Raman cross-section of various analytes forces the use of a Raman reporter for specific surface functionalization, which is time-consuming and limited to low-molecular-weight analytes. To tackle these issues, a hybrid SERS substrate utilizing Ag as plasmonic structures and GaN as charge transfer enhancement centers is presented. By the conformal printing of Ag nanowires onto GaN nanopillars, a highly sensitive SERS substrate with excellent uniformity can be fabricated. As a result, remarkable SERS performance with a substrate enhancement factor of 1.4 × 10 11 at 10 fM for rhodamine 6G molecules with minimal spot variations can be realized. Furthermore, quantification and multiplexing capabilities without surface treatments are demonstrated by detecting harmful antibiotics in aqueous solutions. This work paves the way for the development of a highly sensitive SERS substrate by constructing complex metal-semiconductor architectures.

Effect of annealing to realize high-quality α-Ga2O3 epilayers grown by halide vapor phase epitaxy has been studied. The structural and optical properties of α-Ga2O3 changed with changing annealing duration. In particular, for an annealing duration of 3 min, the crystal quality improved from 51 and 2757 arcsec to 28 and 1539 arcsec for (0006) and (10–14) FWHM, respectively. X-ray photoelectron spectroscopy results confirmed that the oxygen gas during annealing reacted to compensate the oxygen vacancies in the α-Ga2O3 epilayers. These results show that the optimized thermal annealing improved the crystal quality of α-Ga2O3 epilayers.