Influence of Post-Annealing on Properties of α-Ga₂O₃ Epilayer Grown by Halide Vapor Phase Epitaxy

Abstract

Effect of annealing to realize high-quality α-Ga2O3 epilayers grown by halide vapor phase epitaxy has been studied. The structural and optical properties of α-Ga2O3 changed with changing annealing duration. In particular, for an annealing duration of 3 min, the crystal quality improved from 51 and 2757 arcsec to 28 and 1539 arcsec for (0006) and (10–14) FWHM, respectively. X-ray photoelectron spectroscopy results confirmed that the oxygen gas during annealing reacted to compensate the oxygen vacancies in the α-Ga2O3 epilayers. These results show that the optimized thermal annealing improved the crystal quality of α-Ga2O3 epilayers.

Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

“…The dislocation density decreases as the annealing temperature increases, resulting in a decrement in the nature of native imperfections (defects, concentration of native impurity, and stress) at high annealing temperatures [23]. The Williamson-Hall analysis was used to evaluate the crystalline sizes and lattice strain distribution in the sample.…”

Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition

“…To date, α-Al 2 O 3 (sapphire substrate) is regarded as the best foreign substrate for α-Ga 2 O 3 epitaxy, owing to their small lattice mismatch [ 9 , 11 ] and the large-scale commercial availability and reasonable cost of sapphire wafers. Accordingly, several methods have been employed for the hetero-epitaxial growth of Ga 2 O 3 , such as molecular beam epitaxy [ 12 ], halide vapor phase epitaxy [ 13 ], metal-organic chemical vapor deposition [ 14 ], and mist chemical vapor deposition (mist CVD) [ 15 ]. Among these methods, the mist CVD method is a green, facile, and economical approach for the epitaxial growth of phase-pure α-Ga 2 O 3 on sapphire substrates [ 15 , 16 ].…”

Aero-Ga2O3 Nanomaterial Electromagnetically Transparent from Microwaves to Terahertz for Internet of Things Applications

“…Data show that O 1s peak ( Figure 4 c) need to be resolved using two components. The main component BE at 530.98 eV can be attributed to Ga-O bonding in the oxide while the higher BE contribution at 533.17 eV can be assigned to O-vacancies sites and/or Ga suboxides [ 18 , 19 , 20 ]. This peak presence is related to the Ar ions sputtering process used to clean the sample surface in order to remove adventitious carbon contamination.…”