Direct fabrication of organic light-emitting diodes (OLEDs) and organic photodetectors (OPDs) on polymeric substrates, i.e., polymeric waveguide substrates to form flexile optical integrated devices is demonstrated. The OELD and OPD were fabricated by organic molecular beam deposition (OMBD) technique on a polymeric or a glass substrate, for comparison. The device fabricated on a polymeric substrate shows similar device characteristics to that on a glass substrate. Optical signals of faster than 100 MHz have been created by applying pulsed voltage directly to the OLED utilizing diamine derivative, or rubrene or porphine doped in 8-hydoxyquinolinum aluminum derivatives, as an emissive layer. Electrical signals are successively converted to optical signals for optical transmission of moving picture signals with OLED fabricated on a polymeric waveguide. OPDs utilizing phthalocyanines derivatives with superlattice structure provide increased pulse response with input optical signals, and the OPD with the cutoff frequency of more than 5 MHz has been realized. Index Terms-Optical integrated circuits, organic light-emitting device, organic photodetectors, polymeric waveguide. I. INTRODUCTION O RGANIC light-emitting diodes (OLEDs) [1] utilizing fluorescent dye or conducting polymer have attracted great interest because they have advantages for thin-film flat-panel display. An additional advantage is that they are simple for fabrication on various kinds of substrates, including polymeric substrates. Metal phthalocyanines are well-known materials which show good stability, photo activity, and with high mobility. Among them, fluorinated phthalocyanine shows high-electron mobility and will be suitable for photo-absorption and carrier generation layers of organic photodetectors (OPD) with combination with metal phthalocyanines. Forrest et al. reported high-speed OPD utilizing organic materials [2]. On the other hand, polymeric waveguide devices have attracted great attention with regard to their use for optical interconnection Manuscript

A microfocusing experiment for hard X-rays has been performed to evaluate the performance of Fresnel zone plate optics. A tantalum Fresnel zone plate with an outermost zone width of 50 nm and a thickness of 0.5 µm has been fabricated by electron-beam lithography. The focused beam size measured by a knife-edge scan is 58 nm in full-width at half-maximum for the first-order diffraction at an X-ray energy of 8 keV. It can be concluded that this zone plate has nearly diffraction-limited resolution in the hard X-ray region. The measured diffraction efficiency is 5% at 8 keV. The spot size using the third-order focus of the zone plate is measured to be approximately 30 nm.

In order to evaluate the 'resonance intensities' and resonance frequencies of piezoelectric transducers driven 'partially', two mathematical methods are considered: One is the evaluation of 'speed of divergence' at the resonance of Mason's equivalent circuit which is applied appropriately using the conventional concept of a distributed-parameter circuit, and the other is a superposition of complex dynamical variable η to form complex infinite geometric series in which |η| 2 corresponds to the stored energy in the transducer and in which the way of superposition reflects the electrical and mechanical boundary conditions of the transducer. The resonance intensity is related to the effective power at the resonance. The 'partial drive' can induce resonance modes other than a set of odd-degree modes, with various resonance intensities due to a nondissipative cause, on appropriate boundary conditions. The calculation results of the two methods agree with each other satisfactorily, and thus suggest the physical reasonableness of both methods.

Multi-layered flyer ͑aluminum-polyimide-tantalum͒ is designed as a high speed flyer making use of shock impedance matching and reverberation techniques. The designed three layered targets have been irradiated using a 20 J laser beam. Flyer velocities are measured by observing the flyer impact emissions on glass step targets within a 500 m laser focal spot at laser intensities 5ϫ10 12-2 ϫ10 13 W/cm 2. Thin ͑0.5-1.0 m͒ Ta layers of the flyers are accelerated via shock reverberations between the thick polyimide and thin Ta layers for the first time using laser induced shock waves. Their velocities are measured to be more than 13 km/s with a good hydrodynamic stability. The obtained velocity is faster than the ones obtained by a conventional flyer method such as a double gas gun.

We have developed multiple short-period delta layers as a reference material for SIMS ultra-shallow depth profiling. Boron nitride delta layers and silicon spacer layers were sputter-deposited alternately, with a silicon spacer thickness of 1-5 nm. These delta-doped layers were used to measure the sputtering rate change in the initial stage of oxygen ion bombardment. A significant variation of sputtering rate was observed in the initial 3 nm or less. The sputtering rate in the initial 3 nm was estimated to be about four times larger than the steady-state value for 1000 eV oxygen ions.

We present an electron beam nanolithography system which features sub-10-nm beam size over a large 480×480 µ m2 field and a high 70 kV acceleration voltage with a Zr/O/W thermal field emitter tip. A beam can be deflected at 100 MHz in 2-nm steps, which allows the use of highly sensitive resist. The system is equipped with a highly sensitive YAG detector for electrons backscattered from a registration mark as well as a C/W multilayer knife edge for beam size measurement and focusing. These techniques achieve a beam size of about 6 nm. A 10-nm-scale resist pattern was obtained using ZEP520 resist with this system. Furthermore, Si nanostructures have been obtained by using an image reversal process with ECR plasma oxidation. Photoluminescence was observed from the Si nanowires fabricated with this system.

We have developed a novel at-wavelength inspection system for extreme ultraviolet lithography (EUVL) masks that employs an EUV interferometric microscope. The main advantage of this system is the ability to observe a mask directly and detect defects as they are, thus allowing phase defects to be detected even in a finished mask with the absorber. Moreover, this system provides the high spatial resolution of an EUV microscope, the high phase resolution of interferometric measurements, and a high throughput. We investigated the defect detection capability using several types of EUVL masks with programmed defects, and found that programmed phase defects with steps as low as 5 nm can be detected. These results demonstrate the capabilities of a Mirau interferometric microscope for at-wavelength EUVL mask inspection. Considering the diffraction-limited resolution of Schwarzschild optics (∼50 nm), this system should be applicable to the subhundred nanometer technology node.

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